Patents by Inventor BOR-WEN LAI

BOR-WEN LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and manufacturing method thereof
    Patent number: 9331081
    Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask with the second mask; defining a second doped region through an opening of the second mask; and stripping the first mask and the second mask from the substrate. The present disclosure provides a semiconductor structure, including a substrate having a top surface; a first doped region having a first surface; and a second doped region having a second surface. The first surface and the second surface are coplanar with the top surface of the substrate. Either of the doped regions has a monotonically decreasing doping profile from the top surface of the substrate to a bottom of the doped region.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: May 3, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Ming Lin, Chiu-Hua Chung, Yu-Shine Lin, Bor-Wen Lai, Tsung-Lin Lee
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150115367
    Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask with the second mask; defining a second doped region through an opening of the second mask; and stripping the first mask and the second mask from the substrate. The present disclosure provides a semiconductor structure, including a substrate having a top surface; a first doped region having a first surface; and a second doped region having a second surface. The first surface and the second surface are coplanar with the top surface of the substrate. Either of the doped regions has a monotonically decreasing doping profile from the top surface of the substrate to a bottom of the doped region.
    Type: Application
    Filed: October 31, 2013
    Publication date: April 30, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: CHUN-MING LIN, CHIU-HUA CHUNG, YU-SHINE LIN, BOR-WEN LAI, TSUNG-LIN LEE