Abstract: A dual band photodetector includes a first band absorber layer is configured to absorb incident light in a first wavelength spectral band and a second band absorber layer configured to absorb incident light in a second wavelength spectral band. The dual band photodetector further includes an electron-photon blocking (EPB) layer located between the respective layers and includes at least one high band gap layer and at least one intervening layer. The difference in refractive index between the at least one high band gap layer and the at least one intervening layer form a distributed brag reflector (DBR) designed to reflect wavelengths corresponding with radiative recombination photons emitted from at least the first absorber layer to reduce optical crosstalk between the first band absorber layer and the second band absorber layer.

Abstract: A device for detecting polarization of light comprising a first photodetector tuned to absorb TE polarization, a second photodetector tuned to absorb TM polarization, and a circuit for comparing an output from the first and second photodetector for generating a polarization output. The first photodetector comprises a first reflector, an absorption layer on top of the first reflector, and a second reflector on top of the absorption layer. The second photodetector comprises a third reflector on top of an absorption layer, and a fourth reflector disposed under absorption layer.