Abstract: A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a ring-like line, wherein the plurality of cells may be divided into a number of segments, and each one of the read-out lines may be electrically connected with the cells of at least one segment.

Abstract: A cell for a silicon based photoelectric multiplier may comprise a substrate of a second conductivity type, a first layer of a first conductivity type, and/or a second layer of the second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction, and the substrate may be configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side or side walls of the photoelectric multiplier, a negligible portion returns to a front side of the photoelectric multiplier.

Abstract: A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of ˜800 nm to 1000 nm is decreased.

Abstract: A cell for a silicon based photoelectric multiplier may comprise a substrate of a second conductivity type, a first layer of a first conductivity type, and/or a second layer of the second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction, and the substrate may be configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side or side walls of the photoelectric multiplier, a negligible portion returns to a front side of the photoelectric multiplier.

Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm ?3 and which consists of cells, each of which comprises a p? type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p? type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.

Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm?3 and which consists of cells, each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.