Abstract: A method for accessing a flash memory, the method includes: receiving a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells; accessing multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block comprises multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner; and reading a content of the set of flash memory cells.

Abstract: System and method for storing data in a non-volatile memory including a multi-level cell and single-level cell memory portions. To write a dataset to the non-volatile memory, if the size of the dataset is equal to the size of pages in the multi-level cell memory portion, the dataset may be written directly to the multi-level cell memory portion to fill an integer number of pages in a single write operation. However, if the size of the dataset is different than the size of the multi-level cell memory pages, at least a portion of the dataset may be temporarily written to the single-level cell memory portion until data is accumulated in a plurality of write operations having a size equal the size of the multi-level cell memory pages. The accumulated data may fill an integer number of the pages in the multi-level cell memory portion in a single write operation.

Abstract: A method for accessing a flash memory, the method includes: receiving a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells; accessing multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block comprises multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner; and reading a content of the set of flash memory cells.