Patents by Inventor Boris Binder
Boris Binder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11869919Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.Type: GrantFiled: November 25, 2020Date of Patent: January 9, 2024Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Magali Glemet, Boris Binder, Henning Feick, Dirk Offenberg
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Publication number: 20230123410Abstract: A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.Type: ApplicationFiled: October 13, 2022Publication date: April 20, 2023Inventors: Stefano PARASCANDOLA, Dirk OFFENBERG, Boris BINDER
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Patent number: 11393714Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.Type: GrantFiled: July 7, 2020Date of Patent: July 19, 2022Assignee: Infineon Technologies AGInventors: Andre Roeth, Boris Binder, Thoralf Kautzsch, Uwe Rudolph, Maik Stegemann, Mirko Vogt
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Publication number: 20210167117Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.Type: ApplicationFiled: November 25, 2020Publication date: June 3, 2021Inventors: Magali Glemet, Boris Binder, Henning Feick, Dirk Offenberg
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Publication number: 20210013087Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.Type: ApplicationFiled: July 7, 2020Publication date: January 14, 2021Inventors: Andre ROETH, Boris BINDER, Thoralf KAUTZSCH, Uwe RUDOLPH, Maik STEGEMANN, Mirko VOGT
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Patent number: 10060816Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.Type: GrantFiled: December 8, 2016Date of Patent: August 28, 2018Assignee: Infineon Technologies AGInventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Andre Roeth, Bernhard Winkler, Boris Binder
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Patent number: 9752943Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual cylindrical points or feet-like elements with straight or concave sidewalls, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.Type: GrantFiled: September 26, 2014Date of Patent: September 5, 2017Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Andre Röth, Bernhard Winkler, Boris Binder
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Publication number: 20170089790Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.Type: ApplicationFiled: December 8, 2016Publication date: March 30, 2017Inventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Andre Roeth, Bernhard Winkler, Boris Binder
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Patent number: 9546923Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.Type: GrantFiled: January 24, 2014Date of Patent: January 17, 2017Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Heiko Fröhlich, Mirko Vogt, Maik Stegemann, Andre Röth, Bernhard Winkler, Boris Binder
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Patent number: 9527725Abstract: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.Type: GrantFiled: April 16, 2014Date of Patent: December 27, 2016Assignee: Infineon Technologies AGInventors: Boris Binder, Bernd Foeste, Thoralf Kautzsch, Stefan Kolb, Marco Mueller
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Patent number: 9382111Abstract: A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes.Type: GrantFiled: April 27, 2015Date of Patent: July 5, 2016Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Boris Binder, Steffen Bieselt
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Patent number: 9376314Abstract: A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.Type: GrantFiled: June 26, 2014Date of Patent: June 28, 2016Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Boris Binder
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Patent number: 9236241Abstract: According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.Type: GrantFiled: May 5, 2014Date of Patent: January 12, 2016Assignee: Infineon Technologies Dresden GmbHInventors: Thoralf Kautzsch, Alessia Scire, Steffen Bieselt, Uwe Rudolph, Marco Mueller, Boris Binder
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Publication number: 20150375998Abstract: A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.Type: ApplicationFiled: June 26, 2014Publication date: December 31, 2015Inventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Boris Binder
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Publication number: 20150375999Abstract: A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes.Type: ApplicationFiled: April 27, 2015Publication date: December 31, 2015Inventors: Thoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Boris Binder, Steffen Bieselt
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Publication number: 20150318166Abstract: According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.Type: ApplicationFiled: May 5, 2014Publication date: November 5, 2015Applicant: Infineon Technologies Dresden GmbHInventors: Thoralf KAUTZSCH, Alessia SCIRE, Steffen BIESELT, Uwe RUDOLPH, Marco MUELLER, Boris BINDER
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Publication number: 20150210533Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.Type: ApplicationFiled: January 24, 2014Publication date: July 30, 2015Inventors: Thoralf Kautzsch, Heiko Fröhlich, Mirko Vogt, Maik Stegemann, Andre Röth, Bernhard Winkler, Boris Binder
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Publication number: 20150203350Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.Type: ApplicationFiled: March 31, 2015Publication date: July 23, 2015Inventors: Thoralf KAUTZSCH, Boris BINDER, Torsten HELM, Stefan KOLB, Marc PROBST, Uwe RUDOLPH
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Patent number: 8994127Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.Type: GrantFiled: November 24, 2011Date of Patent: March 31, 2015Assignee: Infineon Technologies AGInventors: Thoralf Kautzsch, Boris Binder, Torsten Helm, Stefan Kolb, Marc Probst, Uwe Rudolph
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Patent number: 8921974Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.Type: GrantFiled: June 6, 2013Date of Patent: December 30, 2014Assignee: Infineon Technologies AGInventors: Thoralf Kautzsch, Boris Binder, Uwe Rudolph, Frank Hoffman