Abstract: Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.

Abstract: Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract: Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.

Abstract: The present patent disclosure describes a system and method for maintaining persistent secure connections between a terminal and a host. The system comprises a session manager component for storing session information associated with a terminal identifier (ID) of the terminal, the session information comprising a client connection ID for identifying a persistent secure client connection and a terminal connection ID for identifying a secure terminal connection. The system also comprises a connection manager component for establishing communication between the persistent secure client connection, identified by the client connection ID, and the secure terminal connection, identified by the terminal connection ID.

Abstract: A therapeutic shoe in accordance with the present invention includes an upper; an outsole attached to the upper; and a carbon fiber plate embedded in situ within the sole during a common molding process that forms the outsole, the carbon fiber plate being anatomically correct and extending at least a substantial length of a footbed of the shoe. A bottom surface of the carbon fiber plate is intimately bonded to the outsole.

Abstract: The present patent disclosure describes a system and method for maintaining persistent secure connections between a terminal and a host. The system comprises a session manager component for storing session information associated with a terminal identifier (ID) of the terminal, the session information comprising a client connection ID for identifying a persistent secure client connection and a terminal connection ID for identifying a secure terminal connection. The system also comprises a connection manager component for establishing communication between the persistent secure client connection, identified by the client connection ID, and the secure terminal connection, identified by the terminal connection ID.

Abstract: The disclosed commutator electric machine comprises a field magnet structure electromagnetically connected with the armature having a winding; a commutator including main bars and at least one auxiliary bar for each main bar interconnected by an interbar current-conducting spacers, the electric contact between the interbar current-conducting spacers and the commutator bars taking place along the side surfaces of the bars and being ensured by compression effected in the process of the manufacture of the commutator structure and brushes of the commutator structure. The main commutator bars are also connected to the winding sections of said armature.