Patents by Inventor Boris Druz
Boris Druz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190259559Abstract: An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours.Type: ApplicationFiled: February 7, 2019Publication date: August 22, 2019Inventors: Rustam YEVTUKHOV, Ivan SHKURENKOV, Boris DRUZ, Alan HAYES, Robert HIERONYMI
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Patent number: 10128083Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.Type: GrantFiled: June 1, 2016Date of Patent: November 13, 2018Assignee: VEBCO INSTRUMENTS INC.Inventors: Boris Druz, Rustam Yevtukhov, Robert Hieronymi, Alan V. Hayes, Mathew Levoso, Peter Porshnev
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Patent number: 10014164Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.Type: GrantFiled: May 11, 2017Date of Patent: July 3, 2018Assignee: Veeco Instruments Inc.Inventors: Boris Druz, Rustam Yevtukhov, Rhodri Elliott, James M. Best, Jr., Peter Porshnev
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Patent number: 9978934Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.Type: GrantFiled: October 30, 2015Date of Patent: May 22, 2018Assignee: VEECO Instruments Inc.Inventors: Ajit Paranjpe, Boris Druz, Katrina Rook, Narasimhan Srinivasan
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Publication number: 20170352521Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.Type: ApplicationFiled: June 1, 2016Publication date: December 7, 2017Inventors: Boris Druz, Rustam Yevtukhov, Robert Hieronymi, Alan V. Hayes, Mathew Levoso, Peter Porshnev
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Publication number: 20170330738Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.Type: ApplicationFiled: May 11, 2017Publication date: November 16, 2017Inventors: Boris Druz, Rustam Yevtukhov, Rhodri Elliott, James M. Best, JR., Peter Porshnev
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Publication number: 20170125668Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.Type: ApplicationFiled: October 30, 2015Publication date: May 4, 2017Inventors: Ajit Paranjpe, Boris Druz, Katrina Rook, Narasimhan Srinivasan
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Patent number: 9206500Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.Type: GrantFiled: September 18, 2008Date of Patent: December 8, 2015Inventors: Boris Druz, Roger P. Fremgen, Jr., Alan V. Hayes, Viktor Kanarov, Robert Krause, Ira Reiss, Piero Sferlazzo
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Patent number: 8157976Abstract: Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.Type: GrantFiled: April 26, 2007Date of Patent: April 17, 2012Assignee: Veeco Instruments, Inc.Inventors: Boris Druz, Ivan I. Aksenov, Olexandr A. Luchaninov, Volodymyr E. Strelnytskiy, Volodymyr V. Vasylyev, Isaak Zaritskiy, Piero Sferlazzo
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Publication number: 20110089022Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.Type: ApplicationFiled: December 23, 2010Publication date: April 21, 2011Applicant: VEECO INSTRUMENTS INC.Inventors: Boris Druz, Viktor Kanarov, Hariharakeshave S. Hegde, Alan V. Hayes, Emmanuel Lakios
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Patent number: 7879201Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.Type: GrantFiled: August 11, 2004Date of Patent: February 1, 2011Assignee: Veeco Instruments Inc.Inventors: Boris Druz, Viktor Kanarov, Hariharakeshave S. Hegde, Alan V. Hayes, Emmanuel Lakios
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Publication number: 20090098306Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.Type: ApplicationFiled: September 18, 2008Publication date: April 16, 2009Applicant: Veeco Instruments Inc.Inventors: Boris Druz, Roger P. Fremgen, JR., Alan V. Hayes, Viktor Kanarov, Robert Krause, Ira Reiss, Piero Sferlazzo
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Publication number: 20080264341Abstract: Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions.Type: ApplicationFiled: April 26, 2007Publication date: October 30, 2008Applicant: VEECO INSTRUMENTS INC.Inventors: Boris Druz, Ivan I. Aksenov, Olexandr A. Luchaninov, Volodymyr E. StreInytskiy, Volodymyr V. Vasylyev, Isaak Zaritskiy, Piero Sferlazzo
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Publication number: 20070194245Abstract: Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.Type: ApplicationFiled: February 26, 2007Publication date: August 23, 2007Applicant: VEECO INSTRUMENTS INC.Inventors: Rustam Yevtukhov, Alan Hayes, Viktor Kanarov, Boris Druz
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Publication number: 20060292705Abstract: Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ion milling that removes portions of the layer stack to define a read sensor. The resist mask is removed, after the read sensor is defined, by a planarization process, which eliminates the need to lift-off the resist mask with a conventional chemical-based process. An electrical isolation layer of a material, such as Al2O3, is formed on the masked read sensor. In addition or alternatively, the electrical isolation layer may be formed using an atomic layer deposition (ALD) process performed at an elevated temperature that would otherwise hard bake the resist mask.Type: ApplicationFiled: June 24, 2005Publication date: December 28, 2006Applicant: Veeco Instruments Inc.Inventors: Hariharakeshave Hegde, Ming Mao, Boris Druz, Adrian Devasahayam
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Publication number: 20050034979Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.Type: ApplicationFiled: August 11, 2004Publication date: February 17, 2005Inventors: Boris Druz, Viktor Kanarov, Hariharakeshave Hegde, Alan Hayes, Emmanuel Lakios
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Patent number: 6716322Abstract: A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.Type: GrantFiled: April 19, 2002Date of Patent: April 6, 2004Assignee: Veeco Instruments Inc.Inventors: Hari Hedge, Alan V. Hayes, Boris Druz, Viktor Kanarov, Adrian J. Devasahayam, Emmanuel Lakios