Abstract: A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes selecting one of a plurality of write paths for incoming data, and writing the incoming data via the selected write path. A first write path includes writing to NVRAM, writing from NVRAM to SLC flash memory and writing from SLC flash memory to QLC flash memory. A second write path includes writing to NVRAM and writing from NVRAM to QLC flash memory, bypassing SLC flash memory. A third write path includes writing to SLC flash memory, bypassing NVRAM, and writing from SLC flash memory to QLC flash memory.

Abstract: A redundant array of independent drives (RAID) stripe is formed across a set of storage controllers of a plurality of storage controllers, wherein the RAID stripe comprises two or more of a plurality of modular storage devices of at least one of the set of storage controllers. The RAID stripe is written across the set of storage controllers.

Abstract: A storage system has a first memory, and a second memory that includes storage memory. The storage system has a processing device. The processing device is to select whether to write data to the first memory and write the data from the first memory to the second memory, or to write the data to the second memory bypassing the first memory. The processing device is to write portions of data for storage according to such selection.

Abstract: A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes selecting one of a plurality of write paths for incoming data, and writing the incoming data via the selected write path. A first write path includes writing to NVRAM, writing from NVRAM to SLC flash memory and writing from SLC flash memory to QLC flash memory. A second write path includes writing to NVRAM and writing from NVRAM to QLC flash memory, bypassing SLC flash memory. A third write path includes writing to SLC flash memory, bypassing NVRAM, and writing from SLC flash memory to QLC flash memory.

Abstract: A system for cloud-based file services, comprising: a plurality of single-tenant file system nodes configured to provide file system access to an object store via a plurality of multitenant storage nodes; the plurality of multitenant storage nodes sharing access to the object store; and one or more management nodes configured to provision resources for the plurality of single-tenant file system nodes and the plurality of multitenant storage nodes, including modifying resources within the system.

Abstract: A storage system has a first memory, and a second memory that includes storage memory. The storage system has a processing device. The processing device is to select whether to write data to the first memory and write the data from the first memory to the second memory, or to write the data to the second memory bypassing the first memory. The processing device is to write portions of data for storage according to such selection.

Abstract: A storage system includes a set of storage nodes, a metadata node storing metadata corresponding to data stored at s set of storage nodes and a storage system controller, operatively coupled to the plurality of set of storage nodes and the metadata node. The storage system controller is configured to receive a request to perform a data storage operation from a client device, determine a storage location, within the plurality of storage nodes, that is associated with the data storage operation based on the metadata stored at the metadata node, and perform the data storage operation at the storage location.

Abstract: A system for cloud-based file services, comprising: a plurality of single-tenant file system nodes configured to provide file system access to an object store via a plurality of multitenant storage nodes; the plurality of multitenant storage nodes sharing access to the object store; and one or more management nodes configured to provision resources for the plurality of single-tenant file system nodes and the plurality of multitenant storage nodes, including modifying resources within the system.

Abstract: A first data shard of a redundant array of inexpensive drives (RAID) stripe is stored in storage class solid state memory and parity data is generated for the RAID stripe. The parity data for the RAID stripe is stored in non-storage class solid state memory. A second data shard of the RAID stripe is stored in the storage class solid state memory and updated parity data for the RAID stripe is generated. The updated parity data for the RAID stripe is stored in the non-storage class solid state memory.

Abstract: Storage space available in resiliency groups of storage devices of a storage system are received. A selection between a first migration technique and a second migration technique to relocate data from a first resiliency group to a second resiliency group is made based on the storage space available.

Abstract: A storage system has NVRAM (non-volatile random-access memory), solid-state storage memory, and a processor to perform a method. The method includes allocating virtual units of NVRAM with mapping of the virtual units to physical memory. The method includes writing data having various sizes into allocated first virtual units of memory and into allocated second virtual units of memory. The first virtual units of memory each include a first contiguous physical addressed amount of NVRAM having a first size. The second virtual units of memory each include an amount of NVRAM having a second size. The method includes relocating at least some of the data such that a portion of the allocated second virtual units of memory become available for the allocating.

Abstract: One or more performance parameters associated with data stored at a storage device of a plurality of storage devices are received by a storage controller. A first number of blocks of the storage device to a high resiliency portion and a second number of blocks of the storage device to a low resiliency portion of the storage device are allocated based on the one or more performance parameters.

Abstract: A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes determining that a size of a buffer of a storage system should be adjusted. The storage system comprises a non-volatile random-access memory (NVRAM), single level cell (SLC) flash memory, and quad level cell (QLC) flash memory. The buffer of the storage system comprises one or more of the NVRAM and a portion of the SLC flash memory. The method also includes adjusting the size of the buffer of the storage system to a first size.

Abstract: A first set of physical units of a storage device of a storage system is selected for performance of low latency access operations, wherein other access operations are performed by remaining physical units of the storage device. A determination as to whether a triggering event has occurred that causes a selection of a new set of physical units of the storage device for the performance of low latency access operations is made. A second set of physical units of the storage device is selected for the performance of low latency access operations upon determining that the triggering event has occurred.

Abstract: One or more operations to be performed by a storage system are identified by a first storage node having a processing device and one or more authorities that determine types of erasure coding applied to data stored in the storage system. One or more instructions are transmitted to a second storage node to perform the one or more storage operations, wherein the one or more instructions cause the one or more operations to be performed by the second storage node.

Abstract: A first set of physical units of a storage device of a storage system is selected for performance of low latency access operations, wherein other access operations are performed by remaining physical units of the storage device. A determination as to whether a triggering event has occurred that causes a selection of a new set of physical units of the storage device for the performance of low latency access operations is made. A second set of physical units of the storage device is selected for the performance of low latency access operations upon determining that the triggering event has occurred.

Abstract: A storage system is provided. The storage system include a primary storage node that includes a primary processing device. The primary storage node is communicatively coupled to a secondary storage node. The secondary storage node includes a secondary processing device and a set of non-volatile memory modules. The primary processing device is to identify one or more storage operations to be performed on the set of non-volatile memory modules of the secondary storage node and transmit one or more instructions to the secondary storage node to perform the one or more storage operations, the one or more storage operations performed by the secondary processing device.

Abstract: Data is received by one or more offload components that is to be stored in a storage system. The one or more offload components are operatively coupled to storage devices of the storage system via a first set of communication paths. The data is identified by a storage system controller operatively coupled to the storage devices via a second set of communication paths that are different than the first set of communication paths. An indication of a location in one or more of the storage devices for storing the data is transmitted to the one or more offload components. The indication causes the one or more offload components to store the data in the location of the one or more of the storage devices via the first set of communication paths.

Abstract: One or more performance parameters associated with data stored at a storage device of a plurality of storage devices are received by a storage controller. A first number of blocks of the storage device to a high resiliency portion and a second number of blocks of the storage device to a low resiliency portion of the storage device are allocated based on the one or more performance parameters.

Abstract: A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes determining that a size of a buffer of a storage system should be adjusted. The storage system comprises a non-volatile random-access memory (NVRAM), single level cell (SLC) flash memory, and quad level cell (QLC) flash memory. The buffer of the storage system comprises one or more of the NVRAM and a portion of the SLC flash memory. The method also includes adjusting the size of the buffer of the storage system to a first size.