Abstract: Techniques for high speed optoelectronic coupling by redirection of optical path are disclosed. In one particular embodiment, the techniques may be realized as an optoelectronic receiver comprising an optical signal demultiplexer that may be configured to transmit an optical signal along a first axis, and a photodiode that may be configured to convert the optical signal into an electrical signal, wherein the optical signal demultiplexer may include an inclined end surface that may be configured to reflect the optical signal towards a photoactive area of the photodiode at an obtuse angle of reflection with respect to the first axis.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Evaporate thermal management systems for and methods of grazing incidence collectors (GICs) for extreme ultraviolet (EUV) lithography include a GIC shell interfaced with a jacket to form a structure having a leading end and that defines a chamber. The chamber operably supports at least one wicking layer. A conduit connects the wicking layer to a condenser system that support cooling fluid in a reservoir. When heat is applied to the leading end, the cooling fluid is drawn into the chamber from the condenser unit via capillary action in the wicking layer and an optional gravity assist, while vapor is drawn in the opposite direction from the chamber to the condenser unit. Heat is removed from the condensed vapor at the condenser unit, thereby cooling the GIC mirror shell.

Abstract: Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.

Abstract: Evaporate thermal management systems for and methods of grazing incidence collectors (GICs) for extreme ultraviolet (EUV) lithography include a GIC shell interfaced with a jacket to form a structure having a leading end and that defines a chamber. The chamber operably supports at least one wicking layer. A conduit connects the wicking layer to a condenser system that support cooling fluid in a reservoir. When heat is applied to the leading end, the cooling fluid is drawn into the chamber from the condenser unit via capillary action in the wicking layer and an optional gravity assist, while vapor is drawn in the opposite direction from the chamber to the condenser unit. Heat is removed from the condensed vapor at the condenser unit, thereby cooling the GIC mirror shell.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.

Abstract: Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

Abstract: A multiplexing AWG device capable of producing an ultra-wideband, low ripple, flat-top signal is presented. The AWG device includes an AWG unit and a two-section waveguide coupled to the AWG unit. The two-section waveguide has a first section and a second section. The first section produces a signal having a double-peak field profile and has a first input end and a first output end. The second section reduces the phase variation of the signal having the double-peak field profile exiting the first section. The second section has a second input end that is coupled to the first output end. For example, the first section may be a parabolic tapered waveguide and the second section may be a rectangular waveguide.

Abstract: Provided is an apparatus for substrate processing. The apparatus may include a radiation source emitting a photonic beam, an optical system to form a beam image, a scanning stage, a temperature monitoring means, an output signal generator that compares the monitored temperature with a preset temperature, and a controller coupled to the radiation source and the stage. The stage may be adapted to scan the substrate so the beam image heats a region of the substrate surface, and the temperature monitoring means may collect and analyzes p-polarized radiation of at least three different spectral regions emitted from one or more places on the heated substrate region. The controller in response to a temperature error signal may be programmed to alter the beam intensity and/or to provide changes in the scanning velocity between the stage and the beam. Other apparatuses and temperature monitoring systems are provided as well.

Abstract: The invention is a data transmission device that includes: an input Free Propagation Region (FPR) receiving a multi-wavelength signal and a single-wavelength signal, and two sets of arrayed waveguides coupled to the input FPR to carry the multi-wavelength signal and the single-wavelength signal, respectively. The arrayed waveguides demultiplex the multi-wavelength signal and create copies of the single-wavelength signal. The output plane of an output FPR receives the demultiplexed wavelengths and the copies of the single-wavelength signal such that one of the demultiplexed wavelengths and one of the copies of the single-wavelength signal focus onto the same position on the output plane. The device allows data (e.g., video stream) to be broadcast to all subscribers in a Wavelength-Division-Multiplexed Passive Optical Network (WDM-PON) architecture.

Abstract: The invention is a data transmission device that includes: an input Free Propagation Region (FPR) receiving a multi-wavelength signal and a single-wavelength signal, and two sets of arrayed waveguides coupled to the input FPR to carry the multi-wavelength signal and the single-wavelength signal, respectively. The arrayed waveguides demultiplex the multi-wavelength signal and create copies of the single-wavelength signal. The output plane of an output FPR receives the demultiplexed wavelengths and the copies of the single-wavelength signal such that one of the demultiplexed wavelengths and one of the copies of the single-wavelength signal focus onto the same position on the output plane. The device allows data (e.g., video stream) to be broadcast to all subscribers in a Wavelength-Division-Multiplexed Passive Optical Network (WDM-PON) architecture.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: A multiplexing AWG device capable of producing an ultra-wideband, low ripple, flat-top signal is presented. The AWG device includes an AWG unit and a two-section waveguide coupled to the AWG unit. The two-section waveguide has a first section and a second section. The first section produces a signal having a double-peak field profile and has a first input end and a first output end. The second section reduces the phase variation of the signal having the double-peak field profile exiting the first section. The second section has a second input end that is coupled to the first output end. For example, the first section may be a parabolic tapered waveguide and the second section may be a rectangular waveguide.

Abstract: An optical device that includes an input region, an output region, and an arrayed waveguide grating between the input region and the output region is presented. The input region includes a first input waveguide set and a second input waveguide set, and the output region includes a first output waveguide set and a second output waveguide set. The arrayed waveguide grating is shared by the signals that travel from the input region to the output region. The device is capable of simultaneously functioning as a multiplexer and a demultiplexer, thereby reducing the cost and complexity of a dual-function optical device. Where the arrayed waveguide grating is used for multiplexing, the optical device receives demultiplexed input signals and generates a multiplexed signal. Where the arrayed waveguide grating is used for demultiplexing, the optical device receives a multiplexed input signal and generates a set of demultiplexed signals.

Abstract: Apparatuses and methods are provided for processing a substrate having an upper surface that includes a central region, a peripheral region, and an edge adjacent to the peripheral region. An image having an intensity sufficient to effect thermal processing of the substrate is scanned across the upper surface of the substrate. The image scanning geometry allows processing the central region of the substrate at a substantially uniform temperature without damaging the outer edge. In some instances, the image may be formed from a beam traveling over at least a portion of the central region so that no portion thereof directly illuminates any portion of the edge when the image is scanned across the periphery region. The substrate may be rotated 180° or the beam direction may be switched after part of the scanning operation has been completed.