Patents by Inventor Boris Heitz
Boris Heitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11444077Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.Type: GrantFiled: November 26, 2019Date of Patent: September 13, 2022Assignee: STMicroelectronics SAInventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Publication number: 20200098743Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.Type: ApplicationFiled: November 26, 2019Publication date: March 26, 2020Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Patent number: 10515946Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.Type: GrantFiled: May 17, 2018Date of Patent: December 24, 2019Assignee: STMicroelectronics SAInventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Publication number: 20180269199Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.Type: ApplicationFiled: May 17, 2018Publication date: September 20, 2018Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Patent number: 9997512Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.Type: GrantFiled: June 30, 2016Date of Patent: June 12, 2018Assignee: STMicroelectronics SAInventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Patent number: 9997907Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.Type: GrantFiled: December 10, 2015Date of Patent: June 12, 2018Assignee: STMicroelectronics SAInventors: Johan Bourgeat, Boris Heitz, Jean Jimenez
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Publication number: 20160380427Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.Type: ApplicationFiled: December 10, 2015Publication date: December 29, 2016Applicant: STMicroelectronics SAInventors: Johan Bourgeat, Boris Heitz, Jean Jimenez
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Publication number: 20160315077Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.Type: ApplicationFiled: June 30, 2016Publication date: October 27, 2016Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Patent number: 9401351Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.Type: GrantFiled: January 30, 2015Date of Patent: July 26, 2016Assignee: STMicroelectronics SAInventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Patent number: 9368611Abstract: An integrated circuit may include at least one MOS transistor having a sigmoid response. The at least one MOS transistor may include a substrate, a source region, a drain region, a gate region, and insulating spacer regions on either side of the gate region. The substrate may include a first region situated under the gate region between the insulating spacer regions. At least one of the source and drain regions may be separated from the first region of the substrate by a second region of the substrate situated under an insulating spacer region, which may be of a same type of conductivity as the first region of the substrate.Type: GrantFiled: March 29, 2013Date of Patent: June 14, 2016Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SASInventors: Philippe Galy, Patrice Dehan, Boris Heitz, Jean Jimenez
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Patent number: 9287254Abstract: An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors. A gate region is common to all the MOS transistors and a semiconductor substrate region includes the substrates of all the MOS transistors.Type: GrantFiled: January 16, 2015Date of Patent: March 15, 2016Assignee: STMicroelectronics S.A.Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat
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Publication number: 20150214214Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.Type: ApplicationFiled: January 30, 2015Publication date: July 30, 2015Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat, Agustin Monroy Aguirre
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Publication number: 20150214210Abstract: An electronic device includes a first device terminal and a second device terminal. A first and a second thyristor are reverse-connected between the two device terminals. A first and a second MOS transistor are respectively coupled between the conduction electrodes (emitters and collectors) of the two NPN transistors of the two thyristors. A third MOS transistor is coupled between the emitters of the two NPN bipolar transistors of the two thyristors and a fourth MOS transistor is coupled between the bases of the two PNP bipolar transistors of the two thyristors.Type: ApplicationFiled: January 16, 2015Publication date: July 30, 2015Inventors: Jean Jimenez, Boris Heitz, Johan Bourgeat
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Patent number: 8907373Abstract: A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a field-effect diode. The field-effect diode has a controlled gate that is connected to the gate of the MOS transistor.Type: GrantFiled: September 27, 2012Date of Patent: December 9, 2014Assignee: STMicroelectronics SAInventors: Philippe Galy, Jean Jimenez, Johan Bourgeat, Boris Heitz
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Patent number: 8847275Abstract: The component incorporates, in topological terms, a scalable number of triac structures in a concentric annular arrangement. The component can be used with an electronic device to protect against electrostatic discharges. For example, the components can be used to protect the input/output pad, the first power supply terminal, and the second power supply terminal of an integrated circuit against electrostatic discharges.Type: GrantFiled: March 12, 2013Date of Patent: September 30, 2014Assignee: STMicroelectronics S.A.Inventors: Jean Jimenez, Philippe Galy, Boris Heitz
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Publication number: 20140097464Abstract: The component incorporates, in topological terms, a scalable number of triac structures in a concentric annular arrangement. The component can be used with an electronic device to protect against electrostatic discharges. For example, the components can be used to protect the input/output pad, the first power supply terminal, and the second power supply terminal of an integrated circuit against electrostatic discharges.Type: ApplicationFiled: March 12, 2013Publication date: April 10, 2014Inventors: Jean Jimenez, Philippe Galy, Boris Heitz