Patents by Inventor Boris I. Kvashnin

Boris I. Kvashnin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6736893
    Abstract: The invention provides a process for growing UV region <200 nm transmitting calcium fluoride monocrystals, which includes crystallization from the melt, the annealing of the crystals and subsequent cooling, in a vacuum furnace, and which is effected by the continuous transfer of the crucible containing the melt from the crystallization zone into the annealing zone, each of these two zones having its own independent control system for the process parameters, characterized in that there is a temperature drop of 250-450° C. from the crystallization zone to the annealing zone, with a gradient of 8-12° C./cm, the crucible containing the material to be crystallized is moved from the crystallization zone to the annealing zone at a speed of 1-3 mm/hour, it is first kept in the annealing zone at a holding temperature of 1100-1300° C. for 20-40 hours and is then cooled first to 950-900° C. at a rate of 2-40° C./hour and then to 300° C. at a rage of 5-8° C.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: May 18, 2004
    Assignee: Corning Incorporated
    Inventors: Evgeny A. Garibin, Aleksey A. Demidenko, Boris I. Kvashnin, Igor A. Mironov, Gury T. Petrovsky, Vladimir M. Reyterov, Aleksandr N. Sinev
  • Patent number: 6673150
    Abstract: The invention provides a method of making UV<200 nm transmitting optical fluoride crystals for excimer laser lithography optics and a multicompartment container for growing optical fluoride crystals, comprising a number of graphite bowls that are placed on top of one another to form a stack and which have a central conical orifice in the bottom of each of them, and also comprising a seeding unit that has a central cylindrical orifice and is arranged under the lowermost bowl, characterized in the each bowl is fitted with a heat-removing device that is made in the form of a graphite cylinder with a central conical orifice, is mounted under the bottom of each bowl, and adjoins, with its other surface, the cover of the next bowl down, in which design the cover of each bowl, apart from the uppermost one, has a central conical orifice.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: January 6, 2004
    Assignee: Corning Incorporated
    Inventors: Evgeny A. Garibin, Aleksey A. Demidenko, Boris I. Kvashnin, Igor A. Mironov, Gury T. Petrovsky, Vladimir M. Reyterov, Aleksandr N. Sinev
  • Publication number: 20020190064
    Abstract: The invention provides a method of making UV<200 nm transmitting optical fluoride crystals for excimer laser lithography optics and a multicompartment container for growing optical fluoride crystals, comprising a number of graphite bowls that are placed on top of one another to form a stack and which have a central conical orifice in the bottom of each of them, and also comprising a seeding unit that has a central cylindrical orifice and is arranged under the lowermost bowl, characterized in the each bowl is fitted with a heat-removing device that is made in the form of a graphite cylinder with a central conical orifice, is mounted under the bottom of each bowl, and adjoins, with its other surface, the cover of the next bowl down, in which design the cover of each bowl, apart from the uppermost one, has a central conical orifice.
    Type: Application
    Filed: April 16, 2002
    Publication date: December 19, 2002
    Inventors: Evgeny A. Garibin, Aleksey A. Demidenko, Boris I. Kvashnin, Igor A. Mironov, Gury T. Petrovsky, Vladimir M. Reyterov, Aleksandr N. Sinev
  • Publication number: 20020185057
    Abstract: The invention provides a process for growing UV region <200 nm transmitting calcium fluoride monocrystals, which includes crystallization from the melt, the annealing of the crystals and subsequent cooling, in a vacuum furnace, and which is effected by the continuous transfer of the crucible containing the melt from the crystallization zone into the annealing zone, each of these two zones having its own independent control system for the process parameters, characterized in that there is a temperature drop of 250-450° C. from the crystallization zone to the annealing zone, with a gradient of 8-12° C./cm, the crucible containing the material to be crystallized is moved from the crystallization zone to the annealing zone at a speed of 1-3 mm/hour, it is first kept in the annealing zone at a holding temperature of 1100-1300° C. for 20-40 hours and is then cooled first to 950-900° C. at a rate of 2-40 C./hour and then to 300° C. at a rage of 5-8° C.
    Type: Application
    Filed: April 16, 2002
    Publication date: December 12, 2002
    Inventors: Evgeny A. Garibin, Aleksey A. Demidenko, Boris I. Kvashnin, Igor A. Mironov, Gury T. Petrovsky, Vladimir M. Reyterov, Aleksandr N. Sinev