Abstract: A packaging method comprises: forming a circuit board by forming a substantially continuous conductive layer on an insulating board and removing selected portions of the continuous conductive layer to define an electrically conductive trace; laser cutting the electrically conductive trace to define sub-traces electrically isolated from each other by a laser-cut gap formed by the laser cutting; and bonding a light emitting diode (LED) chip to the circuit board across or adjacent to the laser-cut gap, the bonding including operatively electrically connecting an electrode of the LED chip to one of the sub-traces without using an interposed submount. A semiconductor package comprises an LED chip flip-chip bonded to sub-traces of an electrically conductive trace of a circuit board, the sub-traces being electrically isolated from each other by a narrow gap of less than or about 100 microns.

Abstract: There is provided a phosphor down converting element based on fluoropolymer resin and a method for fabricating the same. There is further provided a method for using said phosphor down converting element to generate white light from a radiation source. The method for fabricating phosphor down converting element includes preparing an appropriate phosphor powder mixture that is capable of absorbing a first band of wavelengths and emitting a second band of wavelengths being greater in length than the first bands, incorporating the phosphor powder mixture into or on a phosphor carrier element comprising a fluoropolymer material, and molding the phosphor down converting elements into useful shapes. Fluoropolymers are the most chemically inert of all plastics, can withstand both extremely high and low temperatures, and show a resistance to weavering and UV degradation, making fluoropolymers optimal for use as a phosphor carrier.

Abstract: In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10?, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36?) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

Abstract: A packaging method comprises: forming a circuit board by forming a substantially continuous conductive layer on an insulating board and removing selected portions of the continuous conductive layer to define an electrically conductive trace; laser cutting the electrically conductive trace to define sub-traces electrically isolated from each other by a laser-cut gap formed by the laser cutting; and bonding a light emitting diode (LED) chip to the circuit board across or adjacent to the laser-cut gap, the bonding including operatively electrically connecting an electrode of the LED chip to one of the sub-traces without using an interposed submount. A semiconductor package comprises an LED chip flip-chip bonded to sub-traces of an electrically conductive trace of a circuit board, the sub-traces being electrically isolated from each other by a narrow gap of less than or about 100 microns.

Abstract: Provided are a lighting device, a backlighting device, and a display device that comprise a radiation source such as LED and wavelength converting members comprising phosphors. In one embodiment, self-absorption within the devices is suppressed or reduced by placing a selective reflector between two wavelength converting members, and the wavelength converting member emitting light with longer peak wavelength is substantially isolated from the irradiation of another wavelength converting member emitting light with shorter peak wavelength. In other embodiments, the wavelength converting members are arranged in strip configuration; or in adjacent hexagons configuration.

Abstract: Systems and methods are provided to mitigate excess die attachment material accrual, and parasitic conductive paths formed thereby. A die attachment material (e.g., solder) is melted using a combination of localized heat sources and ultrasonic energy. The heat sources bring the die attachment material close to its melting point, which reduces an amount of bonding force associated with purely ultrasonic bonding techniques. An ultrasonic transducer brings the die attachment material the rest of the way up to its melting point, which reduces the overall temperature that the die and/or sensitive components thereon endure during the bonding process.

Abstract: A generally planar illumination, display, or backlighting device is disclosed, including a generally planar arrangement of side emitting light emitting diode (LED) devices generating side emitted illumination, and a generally planar arrangement of wavelength conversion elements arranged coplanar with the generally planar arrangement of side emitting light emitting diode (LED) devices. The wavelength conversion elements are interspersed amongst the side emitting LED devices and configured to wavelength convert the side emitted illumination generated by the side emitting LED devices. A display device using such a generally planar illumination device is also disclosed, in which a liquid crystal display (LCD) panel is backlit by the generally planar illumination device.

Abstract: Systems and methods are described that facilitate providing a user with interchangeable phosphor-coated shells, or envelopes, for generate different shades and intensities of white light from a single UV light source. The interchangeability of the low-cost phosphor-coated envelopes permits the use of a single light engine, which is the more expensive component of a solid state lamp. In this manner, consumers are provided with a greater number of lighting choices at low cost than can be achieved using conventional single-envelope lamps.

Abstract: There is provided a phosphor down converting element based on fluoropolymer resin and a method for fabricating the same. There is further provided a method for using said phosphor down converting element to generate white light from a radiation source. The method for fabricating phosphor down converting element includes preparing an appropriate phosphor powder mixture that is capable of absorbing a first band of wavelengths and emitting a second band of wavelengths being greater in length than the first bands, incorporating the phosphor powder mixture into or on a phosphor carrier element comprising a fluoropolymer material, and molding the phosphor down converting elements into useful shapes. Fluoropolymers are the most chemically inert of all plastics, can withstand both extremely high and low temperatures, and show a resistance to weavering and UV degradation, making fluoropolymers optimal for use as a phosphor carrier.

Abstract: Optical test apparatuses and methods, and related subject matter, are disclosed herein.

Abstract: An LED device including an LED chip and a lens positioned apart from the chip and coated with a uniform thickness layer of fluorescent phosphor for converting at least some of the radiation emitted by the chip into visible light. Positioning the phosphor layer away from the LED improves the efficiency of the device and produces more consistent color rendition. The surface area of the lens is preferably at least ten times the surface area of the LED chip. For increased efficiency, the reflector and submount can also be coated with phosphor to further reduce internal absorption.

Abstract: In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.

Abstract: First and second light emitting diode (LED) arrays, which each includes a corresponding number of LED dies, are disposed on a substrate proximately and substantially parallel to one another. Each pair of substantially paralleled LED dies of the first and second arrays is covered by substantially transparent optical encapsulant. The optical encapsulant is one of covered by a reflective layer for a UV to visible spectral region and shaped for total internal light reflection. The substrate is diced along an axis extending in parallel and between the first and second LED arrays.

Abstract: In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10?, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36?) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

Abstract: A surface mount light emitting package includes a chip carrier having top and bottom principal surfaces. At least one light emitting chip is attached to the top principal surface of the chip carrier. A lead frame attached to the top principal surface of the chip carrier. When surface mounted to an associated support, the bottom principal surface of the chip carrier is in thermal contact with the associated support without the lead frame intervening therebetween.

Abstract: A light source (10) comprises a light engine (16), a base (24), a power conversion circuit (30) and an enclosure (22). The light engine (16) comprises at least one LED (12) disposed on a platform (14). The platform (14) is adapted to directly mate with the base (24) which a standard incandescent bulb light base. Phosphor (44) receives the light generated by the at least one LED (12) and converts it to visible light. The enclosure (22) has a shape of a standard incandescent lamp.

Abstract: At least two light emitting diodes emit a non-parallel light beam. A condensing system, operationally coupled with the light emitting diodes, receives the emitted non-parallel light beam and converts the received non-parallel light beam into a parallel light beam. A non-imaging concentrator includes an input surface which collects the parallel light beam, and an output surface, which includes phosphor material and outputs light.

Abstract: An LED device including an LED chip and a lens positioned apart from the chip and coated with a uniform thickness layer of fluorescent phosphor for converting at least some of the radiation emitted by the chip into visible light. Positioning the phosphor layer away from the LED improves the efficiency of the device and produces more consistent color rendition. The surface area of the lens is preferably at least ten times the surface area of the LED chip. For increased efficiency, the reflector and submount can also be coated with phosphor to further reduce internal absorption.

Abstract: In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.