Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited.

Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited.

Abstract: An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited.

Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.

Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.

Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

Abstract: A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C.

Abstract: Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.

Abstract: An inline processing system for patterning magnetic recording layers on hard discs for use in a hard disc drive. Discs are processed on both sides simultaneously in a vertical orientation, in round plate-like holders called MDCs. A plurality (as many as 10) discs are held in a dial carrier of the MDC, and transferred from one process station to another. The dial carrier of the MDC may be rotated and/or angled at up to 70° from normal in each process station, so that one or a plurality of process sources may treat the discs simultaneously. This configuration provides time savings and a reduction in the number and size of process sources needed. A mask enhancement process for patterning of magnetic media, and a filling and planarizing process used therewith, are also disclosed.

Abstract: Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

Abstract: Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Abstract: Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

Abstract: Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the discharge space by applying a current to an electromagnet that is effective to define a plasma density distribution, extracting an ion beam from the plasma, measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet may be adjusted either manually or automatically to modify the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Abstract: A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.

Abstract: A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.

Abstract: A method is provided for a repetitive deposition and etch of a substrate using a carbon containing ion beam in a gridded ion source. The method includes the actual ion beam processing step combined with the thermal and chemical conditioning of the ion source and a special cleaning step(s). The special cleaning step(s) effect robust removal of the precipitates accumulated in the operating source due to the decomposition of carbon containing gases such as hydrocarbons and halocarbons Precipitate removal is achieved by employing ions and radicals formed in an inert gas plasma or a mixture of inert gas and oxygen to reactively etch or bombard the precipitates.

Abstract: A reactive ion beam etching method which employs an oxidizing agent in a plasma contained in an ion source to control carbonaceous deposit (e.g., polymer) formation within the ion source and on the substrate. During operation of an ion source, after operating the ion source with a plasma having a carbonaceous deposit forming species, a plasma containing an oxidizing agent (species) is generated within the ion source. Preferably, within the ion source a plasma is maintained essentially continuously between the time that the carbonaceous deposit forming species is present and the time that the oxidizing agent is present. A reactive ion beam extracted from an ion source containing a plasma having an oxidizing species may be impinged onto a sample substrate to remove (i.e., etch) any carbonaceous material deposits (e.g., polymers) formed on the sample, such as may be formed from previous reactive ion beam etching (RIBE) processing steps using an ion beam having species which may form carbonaceous (e.g.

Abstract: A charged particle source includes a vessel defining an interior for containing a plasma, the vessel having an inlet communicating with the interior of the vessel and connected to a source of atoms, and an aperture through which a charged particle beam is discharged, an energy generator for communicating with the atoms in the interior of the vessel and effecting ionization of the atoms in the vessel and creating the plasma, an electrode assembly disposed in the interior of the vessel, the electrode assembly including a conductive electrode support member, a tray member associated with the support member, a conductive liquid disposed in the tray member, the liquid having a surface area and a conductor connected between the conductive liquid and a voltage source, and an ion optics assembly disposed adjacent the vessel for accelerating plasma-generated charged particles having the same polarity as the conductive liquid in the vessel while maintaining charged particles of the opposite polarity within the vessel.

Abstract: A charged particle source applicable for etching, thin film deposition, or surface modification includes a conductive electrode for controlling the plasma potential and beam voltage, the electrode retaining long term conductivity during operation, such as by shielding or in situ cleaning during operation, and/or by being operated in pulse mode conditions capable of preventing charge accumulation in the source during ion extraction.