Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.

Abstract: The presently disclosed subject matter includes a computer system and a computer-implemented method of generating synthetic examination output images, including synthetic fault images and synthetic fault-free images. The synthetic fault images comprise artificially generated 3D defects. The proposed technique enables fast, accurate, and efficient generation of a large and diverse collection of synthetic fault images and fault-free images, which can be implemented in runtime, as part of the examination process of semiconductor specimens.

Abstract: The presently disclosed subject matter includes a computer system and a computer-implemented method of generating synthetic examination output images, including synthetic fault images and synthetic fault-free images. The synthetic images comprise artificially generated 3D defects. A machine learning model is trained for transforming examination output images to height maps. The height maps are modified to include certain 3D features, and a second machine learning model is used for transforming the height maps to modified examination output images to exhibit the 3D features.

Abstract: The presently disclosed subject matter includes a method and a computer system dedicated for determining semiconductor specimen topography based on grayscale level (GL) imaging output. According to the disclosed approach, the semiconductor specimen surface is scanned from top-view using an examination tool such as a Scanning Electron Microscopy (SEM) to generate a grayscale level (GL) output image of the scanned surface. The GL output images are processed to deduce the corresponding height values of the scanned semiconductor specimen based on graphical features of the GL output images. The height values are then used for validating CMP hotspot predictions, which enhance the accuracy of hotspot detection and increase the reliability of the dummy fill results.

Abstract: There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining an original image of the semiconductor specimen, the original image having a first region annotated as enclosing a defective feature; specifying a second region in the original image containing the first region, giving rise to a contextual region between the first region and the second region; identifying in a target image of the specimen a set of candidate areas matching the contextual region in accordance with a matching measure; selecting one or more candidate areas from the set of candidate areas; and pasting the first region or part thereof with respect to the one or more candidate areas, giving rise to an augmented target image usable for defect examination on the semiconductor specimen.

Abstract: There is provided a system and method of examination of semiconductor specimens. The method includes generating a sequence of anomaly scores corresponding to a sequence of specimens sequentially fabricated and examined during a fabrication process, comprising, for each given specimen: obtaining an image of the given specimen acquired by an examination tool; using a machine learning (ML) model to process the image and obtaining an anomaly map indicative of pattern variation in the image; and deriving, based on the anomaly map, an anomaly score indicative of level of pattern variation presented in the given specimen, wherein the anomaly score is correlated with a defectivity score related to defect detection in a correlation relationship, and has higher detection sensitivity than the defectivity score; and analyzing the sequence of anomaly scores to monitor on-going process stability, thereby providing defect related prediction along the fabrication process based on the correlation relationship.

Abstract: There are provided systems and methods comprising obtaining data Dpixel_intensity informative of a pixel intensity profile of a given specimen, feeding the data Dpixel_intensity to a machine learning model to determine, based on the data Dpixel_intensity, data informative of a depth of the given specimen, wherein the machine learning model has been trained with a training set, wherein at least part of the training set has been generated based on a model operative to predict, based on one or more parameters informative of a specimen, data informative of a pixel intensity profile of the specimen.

Abstract: There is provided a system and method for examining a semiconductor specimen. The method includes obtaining a runtime image of the specimen, and providing the runtime image as an input to an end-to-end (E2E) learning model to process, thereby obtaining, as an output of the E2E learning model, runtime measurement data specific for a metrology application. The E2E learning model is previously trained for the metrology application using a training set comprising a plurality of training images of the specimen and respective ground truth measurement data associated therewith, and one or more cost functions specifically configured to evaluate, for the plurality of training images and corresponding training measurement data outputted by the E2E learning model, one or more metrology benchmarks from a group comprising precision, correlation, and matching.

Abstract: There is provided a system and method of examination of a semiconductor specimen. The method includes obtaining an e-beam image representative of a given layer of a given structure on the specimen in runtime, processing at least the e-beam image using a ML model, and obtaining yield related prediction with respect to the given structure prior to performing an electrical test. The ML model is previously trained using a training set comprising multiple stacks of e-beam images corresponding to multiple sites of the given structure on one or more training specimens, each stack of e-beam images representative of the at least given layer of a respective site; and test data acquired from an electrical test performed at the multiple sites and related to actual yield of the training specimens, the test data respectively correlated with the stacks of e-beam images and used as ground truth thereof.

Abstract: A method includes, receiving a first digital image (FDI) to-be printed by a digital printing system (DPS) (10). In a in training phase: for first selected regions (111) in the FDI, a first set of synthetic images (SIs) (112A, 112B, 114A, 114B, 116A, 116B) having a defect caused by a defective part (DP) (99) in the first selected regions, is produced; a neural network (NN) (150) is trained to detect the defect using the first set SIs. In a subsequent detection phase: the NN is applied for identifying, in a second digital image (SDI) (136, 146) acquired from an image produced by the DPS, suspected second regions (135, 145); for each of the second regions, a second set (137, 147) of SIs having DPs that form the defects, is produced; and the DP is identified by comparing, in each of the second regions, between the SDI and the second set SIs.

Abstract: There is provided a system and method of semiconductor specimen examination. The method includes obtaining a plurality of images of a semiconductor specimen acquired by an examination tool; processing the plurality of images using a first machine learning (ML) model for defect detection, thereby obtaining, from the plurality of images, a set of images labeled with detected defects, wherein the first ML model is previously trained using a first training set comprising a subset of synthetic defective images each containing one or more synthetic defects, and a subset of nominal images; and training a second ML model using a second training set comprising at least part of the set of images labeled with detected defects, wherein the second ML model, upon being trained, is usable for defect detection with improved detection performance with respect to the first ML model.

Abstract: There are provided systems and methods comprising, for each given overlay target of a plurality of different overlay targets to be manufactured on a semiconductor specimen, said given overlay target comprising a plurality of stacked semiconductor layers, obtaining a design image of the given overlay target, feeding the design image to a trained machine learning model, to simulate at least one image of the given overlay target that would have been acquired by an electron beam examination system, using the at least one image to determine, before actual manufacturing of the given overlay target, data informative of at least one simulated overlay in the image, and using the data informative of the at least one simulated overlay of each given overlay target to select at least one optimal overlay target among the plurality of different overlay targets, the optimal overlay target being usable to be manufactured on the semiconductor specimen.

Abstract: There is provided a system and method of examination of semiconductor specimens. The method includes generating a sequence of anomaly scores corresponding to a sequence of specimens sequentially fabricated and examined during a fabrication process, comprising, for each given specimen: obtaining an image of the given specimen acquired by an examination tool; using a machine learning (ML) model to process the image and obtaining an anomaly map indicative of pattern variation in the image; and deriving, based on the anomaly map, an anomaly score indicative of level of pattern variation presented in the given specimen, wherein the anomaly score is correlated with a defectivity score related to defect detection in a correlation relationship, and has higher detection sensitivity than the defectivity score; and analyzing the sequence of anomaly scores to monitor on-going process stability, thereby providing defect related prediction along the fabrication process based on the correlation relationship.

Abstract: There is provided a system and method of examination of a semiconductor specimen. The method includes obtaining an e-beam image representative of a given layer of a given structure on the specimen in runtime, processing at least the e-beam image using a ML model, and obtaining yield related prediction with respect to the given structure prior to performing an electrical test. The ML model is previously trained using a training set comprising multiple stacks of e-beam images corresponding to multiple sites of the given structure on one or more training specimens, each stack of e-beam images representative of the at least given layer of a respective site; and test data acquired from an electrical test performed at the multiple sites and related to actual yield of the training specimens, the test data respectively correlated with the stacks of e-beam images and used as ground truth thereof.

Abstract: There is provided a system and method for examining a semiconductor specimen. The method includes obtaining a runtime image of the specimen, and providing the runtime image as an input to an end-to-end (E2E) learning model to process, thereby obtaining, as an output of the E2E learning model, runtime measurement data specific for a metrology application. The E2E learning model is previously trained for the metrology application using a training set comprising a plurality of training images of the specimen and respective ground truth measurement data associated therewith, and one or more cost functions specifically configured to evaluate, for the plurality of training images and corresponding training measurement data outputted by the E2E learning model, one or more metrology benchmarks from a group comprising precision, correlation, and matching.

Abstract: There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining an original image of the semiconductor specimen, the original image having a first region annotated as enclosing a defective feature; specifying a second region in the original image containing the first region, giving rise to a contextual region between the first region and the second region; identifying in a target image of the specimen a set of candidate areas matching the contextual region in accordance with a matching measure; selecting one or more candidate areas from the set of candidate areas; and pasting the first region or part thereof with respect to the one or more candidate areas, giving rise to an augmented target image usable for defect examination on the semiconductor specimen.

Abstract: A method includes, receiving a first digital image (FDI) to-be printed by a digital printing system (DPS) (10). In a in training phase: for first selected regions (111) in the FDI, a first set of synthetic images (SIs) (112A, 112B, 114A, 114B, 116A, 116B) having a defect caused by a defective part (DP) (99) in the first selected regions, is produced; a neural network (NN) (150) is trained to detect the defect using the first set SIs. In a subsequent detection phase: the NN is applied for identifying, in a second digital image (SDI) (136, 146) acquired from an image produced by the DPS, suspected second regions (135, 145); for each of the second regions, a second set (137, 147) of SIs having DPs that form the defects, is produced; and the DP is identified by comparing, in each of the second regions, between the SDI and the second set SIs.

Abstract: A method for correcting an error in image printing, the method includes receiving a reference digital image (RDI). Based on a predefined selection criterion, one or more regions in the RDI that are suitable for use as anchor features for sensing the error, are automatically selected. A digital image (DI) acquired from a printed image of the RDI, is received and the one or more regions are automatically identified in the DI. Based on the anchor features of the DI, the error is automatically estimated in the printed image. A correction that, when applied to the DI, compensates for the estimated error, is calculated. The estimated error is corrected in a subsequent digital image (SDI) to be printed, and the SDI having the corrected error, is printed.

Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.

Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.