Patents by Inventor Boris Matveev

Boris Matveev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6995360
    Abstract: A method of monitoring gas in a downhole environment is discussed which provides downhole a mid-infrared light emitting diode, operates the diode to transmit respective infrared signals on a first optical path extending from the diode through a downhole gas sample and a second optical path extending from the diode through a reference gas sample, detects the transmitted infrared signals, and determines the concentration of a component of the downhole gas sample from the detected signals.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: February 7, 2006
    Assignee: Schlumberger Technology Corporation
    Inventors: Timothy Gareth John Jones, Boris Matveev, Vladimir Vaynshteyn, Christian Besson, Oliver C. Mullins, Li Jiang
  • Publication number: 20050269499
    Abstract: A method of monitoring gas in a downhole environment is discussed which provides downhole a mid-infrared light emitting diode, operates the diode to transmit respective infrared signals on a first optical path extending from the diode through a downhole gas sample and a second optical path extending from the diode through a reference gas sample, detects the transmitted infrared signals, and determines the concentration of a component of the downhole gas sample from the detected signals.
    Type: Application
    Filed: May 23, 2003
    Publication date: December 8, 2005
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Timothy Jones, Boris Matveev, Vladimir Vaynshteyn, Christian Besson, Oliver Mullins, Li Jiang
  • Patent number: 6876006
    Abstract: A radiation source (30) is provided comprising a first active layer (42) coupled to a second active layer (62), wherein the first active layer (42) produces primary radiation of frequency v1 by appropriate stimulation, and the primary radiation is converted by the second active layer (62) to secondary radiation of frequency v2 for subsequent output. The coupling between the first and second active layers is achieved by an intermediary layer (58) disposed between the first active layer (42) and the second active layer (62). The radiation source (30) further comprises a p-n junction (48) incorporated in the first active layer (42), where injection of electrical carriers into the first active layer (42) from the p-n junction stimulates the first active layer (42) to emit the primary radiation.
    Type: Grant
    Filed: April 21, 2000
    Date of Patent: April 5, 2005
    Assignee: Schlumberger Technology Corporation
    Inventors: Boris Matveev, Nonna Zotova, Natalia Il'Inskaya, Sergey Karandashov, Maxim Remennyi, Nikolai Stus' , Georgii Talalakin