Patents by Inventor Boris N. Feigelson

Boris N. Feigelson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12376199
    Abstract: RF susceptors manufactured by means of 3D printing. 3D-printed susceptors in accordance with the invention include susceptors having solid or mesh walls, where the susceptors are in the form of hollow cylinders, pyramids, spheres, hemispheres, ellipsoids, paraboloids, toroids, or prisms; flat planes; or other hollow or solid three-dimensional shapes. The 3D-printed susceptors can be formed from any suitable starting material, such as tungsten powder, graphite, silicon carbide, molybdenum powder, tantalum powder, rhenium powder, or alloys thereof, or can be formed such that some portions of the susceptors are formed from one or more materials while other portions are formed from different material(s).
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: July 29, 2025
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Alan G. Jacobs, Boris N. Feigelson
  • Publication number: 20250215609
    Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.
    Type: Application
    Filed: March 21, 2025
    Publication date: July 3, 2025
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alexander L. Efros, Benjamin L. Greenberg, Michael Shur
  • Publication number: 20250191919
    Abstract: Methods of preventing hydrogen penetration into a material during high-temperature processing such as annealing of an ion-implanted GaN sample. In some embodiments, a hydrogen getter that can withstand the high temperatures is used, where the getter includes a getter material which can capture hydrogen from the annealing ambient before it can diffuse into the material, a surface layer to prevent damage to the getter from exposure to nitrogen in the annealing ambient and further includes an intermediate barrier layer to prevent mixing of the getter material and a surface layer in order to protect the getter during the high-temperature processing. In other embodiments, a hydrogen-blocking layer situated adjacent to the material being processed is used, where the hydrogen-blocking layer prevents hydrogen from the ambient from penetrating into the material.
    Type: Application
    Filed: December 6, 2023
    Publication date: June 12, 2025
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Alan G. Jacobs, Boris N. Feigelson
  • Publication number: 20250191985
    Abstract: Methods of preventing hydrogen penetration into a material during high-temperature processing such as annealing of an ion-implanted GaN sample. In some embodiments, a hydrogen getter that can withstand the high temperatures is used, where the getter includes a getter material which can capture hydrogen from the annealing ambient before it can diffuse into the material, a surface layer to prevent damage to the getter from exposure to nitrogen in the annealing ambient and further includes an intermediate barrier layer to prevent mixing of the getter material and a surface layer in order to protect the getter during the high-temperature processing. In other embodiments, a hydrogen-blocking layer situated adjacent to the material being processed is used, where the hydrogen-blocking layer prevents hydrogen from the ambient from penetrating into the material.
    Type: Application
    Filed: December 6, 2023
    Publication date: June 12, 2025
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Alan G. Jacobs, Boris N. Feigelson
  • Publication number: 20250183038
    Abstract: Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.
    Type: Application
    Filed: January 30, 2025
    Publication date: June 5, 2025
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alan G. Jacobs
  • Patent number: 12281409
    Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: April 22, 2025
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alexander L. Efros, Benjamin L. Greenberg, Michael Shur
  • Patent number: 12247316
    Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: March 11, 2025
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alexander L. Efros, Benjamin L. Greenberg, Michael Shur
  • Patent number: 12237169
    Abstract: Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: February 25, 2025
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alan G. Jacobs
  • Patent number: 12114569
    Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.
    Type: Grant
    Filed: December 2, 2022
    Date of Patent: October 8, 2024
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Kevin P. Anderson, Benjamin L Greenberg, James A. Wollmershauser, Alan G. Jacobs
  • Publication number: 20240234139
    Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.
    Type: Application
    Filed: October 20, 2023
    Publication date: July 11, 2024
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Marko J. Tadjer, Joseph A. Spencer, Alan G. Jacobs, Hannah N. Masten, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Tatyana I. Feygelson, Bradford B. Pate, Boris N. Feigelson
  • Publication number: 20240136180
    Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.
    Type: Application
    Filed: October 19, 2023
    Publication date: April 25, 2024
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Marko J. Tadjer, Joseph A. Spencer, Alan G. Jacobs, Hannah N. Masten, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Tatyana I. Feygelson, Bradford B. Pate, Boris N. Feigelson
  • Patent number: 11944011
    Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.
    Type: Grant
    Filed: December 2, 2022
    Date of Patent: March 26, 2024
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Kevin P. Anderson, Benjamin L. Greenberg, James A. Wollmershauser, Alan G. Jacobs
  • Publication number: 20240014263
    Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.
    Type: Application
    Filed: September 23, 2022
    Publication date: January 11, 2024
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alexander L. Efros, Benjamin L. Greenberg, Michael Shur
  • Publication number: 20240014271
    Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.
    Type: Application
    Filed: September 23, 2022
    Publication date: January 11, 2024
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alexander L. Efros, Benjamin L. Greenberg, Michael Shur
  • Patent number: 11817318
    Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm?3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: November 14, 2023
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Travis J. Anderson, James C. Gallagher, Marko J. Tadjer, Alan G. Jacobs, Boris N. Feigelson
  • Publication number: 20230207323
    Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm?3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
    Type: Application
    Filed: March 1, 2023
    Publication date: June 29, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Travis J. Anderson, James C. Gallagher, Marko J. Tadjer, Alan G. Jacobs, Boris N. Feigelson
  • Publication number: 20230200244
    Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.
    Type: Application
    Filed: December 2, 2022
    Publication date: June 22, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Kevin P. Anderson, Benjamin L. Greenberg, James A. Wollmershauser, Alan G. Jacobs
  • Publication number: 20230200243
    Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.
    Type: Application
    Filed: December 2, 2022
    Publication date: June 22, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Kevin P. Anderson, Benjamin L. Greenberg, James A. Wollmershauser, Alan G. Jacobs
  • Publication number: 20230197454
    Abstract: Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.
    Type: Application
    Filed: April 6, 2022
    Publication date: June 22, 2023
    Applicant: The Government of the United States of America, as Represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Alan G. Jacobs
  • Publication number: 20230180609
    Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material.
    Type: Application
    Filed: December 2, 2022
    Publication date: June 8, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Kevin P. Anderson, Benjamin L. Greenberg, James A. Wollmershauser, Alan G. Jacobs