Patents by Inventor Boris Rodrigues
Boris Rodrigues has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11923465Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.Type: GrantFiled: December 17, 2020Date of Patent: March 5, 2024Assignee: STMicroelectronics (Crolles 2) SASInventors: Arnaud Tournier, Boris Rodrigues Goncalves, Frederic Lalanne
-
Publication number: 20230317744Abstract: A photodiode is formed in a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes a first N-type semiconductor region formed by epitaxial growth and a second N-type semiconductor region (that is more heavily doped than the first region) extending into the first N-type semiconductor region from the first surface. The dopant concentration of the first N-type semiconductor region gradually increases between the second surface and the first surface of the semiconductor substrate. An implanted heavily P-type doped region is formed in the second N-type semiconductor region at the first surface.Type: ApplicationFiled: March 28, 2023Publication date: October 5, 2023Applicant: STMicroelectronics (Crolles 2) SASInventors: Boris RODRIGUES GONCALVES, Pascal FONTENEAU
-
Publication number: 20220320359Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: ApplicationFiled: June 23, 2022Publication date: October 6, 2022Applicant: STMicroelectronics (Crolles 2) SASInventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Francois ROY
-
Patent number: 11444110Abstract: A pixel includes a photoconversion zone, an insulated vertical electrode and at least one charge storage zone. The photoconversion zone belongs to a first part of a semiconductor substrate and each charge storage zone belongs to a second part of the substrate physically separated from the first part of the substrate by the insulated vertical electrode.Type: GrantFiled: April 8, 2021Date of Patent: September 13, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Boris Rodrigues Goncalves, Frederic Lalanne
-
Patent number: 11417789Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: GrantFiled: March 20, 2020Date of Patent: August 16, 2022Assignee: STMicroelectronics (Crolles 2) SASInventors: Arnaud Tournier, Boris Rodrigues Goncalves, Francois Roy
-
Publication number: 20210343766Abstract: A pixel includes a photoconversion zone, an insulated vertical electrode and at least one charge storage zone. The photoconversion zone belongs to a first part of a semiconductor substrate and each charge storage zone belongs to a second part of the substrate physically separated from the first part of the substrate by the insulated vertical electrode.Type: ApplicationFiled: April 8, 2021Publication date: November 4, 2021Applicant: STMicroelectronics (Crolles 2) SASInventors: Boris RODRIGUES GONCALVES, Frederic LALANNE
-
Patent number: 11107938Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.Type: GrantFiled: February 13, 2020Date of Patent: August 31, 2021Assignee: STMicroelectronics (Crolles 2) SASInventors: Boris Rodrigues Goncalves, Arnaud Tournier
-
Publication number: 20210193849Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.Type: ApplicationFiled: December 17, 2020Publication date: June 24, 2021Inventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Frederic LALANNE, Pascal FONTENEAU
-
Publication number: 20200313023Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.Type: ApplicationFiled: March 20, 2020Publication date: October 1, 2020Inventors: Arnaud TOURNIER, Boris RODRIGUES GONCALVES, Francois ROY
-
Publication number: 20200266310Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.Type: ApplicationFiled: February 13, 2020Publication date: August 20, 2020Applicant: STMicroelectronics (Crolles 2) SASInventors: Boris RODRIGUES GONCALVES, Arnaud TOURNIER
-
Patent number: 10613202Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: November 19, 2018Date of Patent: April 7, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
-
Patent number: 10488499Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.Type: GrantFiled: December 22, 2016Date of Patent: November 26, 2019Assignees: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
-
Publication number: 20190086519Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Applicant: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
-
Patent number: 10162048Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: December 28, 2016Date of Patent: December 25, 2018Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
-
Publication number: 20170192090Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.Type: ApplicationFiled: December 22, 2016Publication date: July 6, 2017Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Marie Guillon, Yvon Cazaux, Boris Rodrigues, Alexis Rochas
-
Publication number: 20170194368Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: December 28, 2016Publication date: July 6, 2017Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard