Abstract: There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining an original image of the semiconductor specimen, the original image having a first region annotated as enclosing a defective feature; specifying a second region in the original image containing the first region, giving rise to a contextual region between the first region and the second region; identifying in a target image of the specimen a set of candidate areas matching the contextual region in accordance with a matching measure; selecting one or more candidate areas from the set of candidate areas; and pasting the first region or part thereof with respect to the one or more candidate areas, giving rise to an augmented target image usable for defect examination on the semiconductor specimen.

Abstract: There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining a runtime image of the semiconductor specimen, generating a reference image based on the runtime image using a machine learning (ML) model, and performing defect examination on the runtime image using the generated reference image. The ML model is previously trained during setup using a training set comprising one or more pairs of training images, each pair including a defective image and a corresponding defect-free image. The training comprises, for each pair, processing the defective image by the ML model to obtain a predicted image, and optimizing the ML model to minimize a difference between the predicted image and the defect-free image.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: An apparatus and associated methods for measuring thickness and velocity of flat moving materials utilizing high frequency radar technologies. Two identical radar-based systems for measuring absolute distances between the source of the radar-generated electromagnetic wave and each surface of a flat sheet material is used to determine the thickness of that material as a relative distance. A pair of high frequency radars situated at different locations used to measure the delay time between the occurrences of fingerprint-like unevenness on the moving flat sheet of material to determine the linear velocity of the moving material sheet.

Abstract: An apparatus and associated methods for measuring thickness and velocity of flat moving materials utilizing high frequency radar technologies. Two identical radar-based systems for measuring absolute distances between the source of the radar-generated electromagnetic wave and each surface of a flat sheet material is used to determine the thickness of that material as a relative distance. A pair of high frequency radars situated at different locations used to measure the delay time between the occurrences of fingerprint-like unevenness on the moving flat sheet of material to determine the linear velocity of the moving material sheet.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A system receives, based on processing of an inspected frame of an inspected image generated by collecting signals indicative of a pattern on an article, at least one candidate defect location in the inspected frame. The system defines a candidate patch within the inspected frame. The candidate patch is associated with the candidate defect location. The system identifies at least one similar patch in the inspected frame using a predefined similarity criterion and determines whether a defect exists at the candidate defect location based on a comparison of at least a portion of the candidate patch with at least a corresponding portion of the at least one similar patch.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A system receives, based on processing of an inspected frame of an inspected image generated by collecting signals indicative of a pattern on an article, at least one candidate defect location in the inspected frame. The system defines a candidate patch within the inspected frame. The candidate patch is associated with the candidate defect location. The system identifies at least one similar patch in the inspected frame using a predefined similarity criterion and determines whether a defect exists at the candidate defect location based on a comparison of at least a portion of the candidate patch with at least a corresponding portion of the at least one similar patch.

Abstract: A method and system are presented for use in measuring in complex patterned structures. A full model and at least one approximate model are provided for the same measurement site in a structure, said at least one approximate model satisfying a condition that a relation between the full model and the approximate model is defined by a predetermined function. A library is created for simulated data calculated by the approximate model for the entire parametric space of the approximate model. Also provided is data corresponding to simulated data calculated by the full model in selected points of said parametric space. The library for the approximate model data and said data of the full model are utilized for creating a library of values of a correction term for said parametric space, the correction term being determined as said predetermined function of the relation between the full model and the approximate model.

Abstract: A method and system are provided for use in measurement of at least one parameter of a patterned structure. The method comprises: providing input data comprising: measured data including multiple measured signals corresponding to measurements on different sites of the structure; and data indicative of theoretical signals, a relation between the theoretical and measured signals being indicative of at least one parameter of the structure; providing a penalty function based on at least one selected global parameter characterizing at least one property of the structure; and performing a fitting procedure between the theoretical and measured signals, said performing of the fitting procedure comprising using said penalty function for determining an optimized relation between the theoretical and measured signals, and using the optimized relation to determine said at least one parameter of the structure.

Abstract: An acoustic method for measuring of a distance between an emitter of acoustic energy and a target object provides for an accurate measurement by having the measurement's outcome invariant to the speed of sound variations along the acoustical path between the emitter and the target. A plurality of emitters and a plurality of receivers are used in the invention. One acoustic emitter and one receiver are located in a spatial region such that the sent and the reflected acoustical energy passes along substantially same vertical line between the emitter and the target. Another acoustic emitter sends the acoustical energy at an angled direction to the same area on the target's reflecting surface as the first emitter does. The corresponding echo travels to another receiver. During the measurement, two specific variables are being monitored such that possible variations of the speed of sound are irrelevant to the result of the distance measurement.

Abstract: An acoustic method for measuring of a distance between an emitter of acoustic energy and a target object provides for an accurate measurement by having the measurement's outcome invariant to the speed of sound variations along the acoustical path between the emitter and the target. A plurality of emitters and a plurality of receivers are used in the invention. One acoustic emitter and one receiver are located in a spatial region such that the sent and the reflected acoustical energy passes along substantially same vertical line between the emitter and the target. Another acoustic emitter sends the acoustical energy at an angled direction to the same area on the target's reflecting surface as the first emitter does. The corresponding echo travels to another receiver. During the measurement, two specific variables are being monitored. The first variable is associated with the distance between the first emitter and the target.