Abstract: An improved current cell and current switch is described for use in digital-to-analog converters and other current mode circuits. The current switch is implemented using BiCMOS circuitry which is characterized by an absence of base current error and a switching speed which is approximately twice as fast as the switching speed of prior art MOS-based switches. According to one embodiment, the current cell is implemented in BiCMOS which offers higher output resistance, smaller minimum voltage, and improved accuracy over prior art MOS-based self-calibrated current cells. According to another embodiment, the current cell is implemented in CMOS and is characterized by a significant reduction in charge injection, leakage current and error due to coupling of the cell output voltage back to the storage node, as compared with prior art MOS-based current cells.