Abstract: The lateral pulling growth of a crystal ribbon is established under precise heat control by pulling laterally the crystal ribbon from the melt of a crystalline substance having the same crystal structure as that of the crystal ribbon.

Abstract: In a method for growing ribbon-like crystal of crystalline substance, a seed crystal is contacted on the upper surface of melt of crystalline substance raised up to the level beyond the upper edge of a crucible, thereafter the contact interface between said seed crystal or a successively growing crystal and the melt (the solid-liquid interface) is cooled under freezing point of said crystalline substance, thereby the crystal is made to successively grow on said solid-liquid interface, while said seed crystal or said successively growing crystal is drawn out substantially in horizontal direction, wherein the circulating convection is made to cause in such a manner that high temperature melt flows underside of said solid-liquid interface, thereby the crystal growth in the direction of depth of the melt is prevented.

Abstract: A method for growing a thin and flat ribbon-like crystal of crystalline substance, wherein a seed crystal is contacted with horizontal free surface of melt of crystalline substance raised up to the level beyond the upper edge of a crucible, thereafter the contact interface between said seed crystal or a successively growing crystal and the melt (the solid-liquid interface) is cooled under freezing point of said crystalline substance, thereby the crystal is made to successively grow on said solid-liquid interface, while said seed crystal and said successively growing crystal is drawn out substantially in horizontal direction, wherein an outwardly projecting eaves-structure is formed on at least a part of an upper peripheral wall of said crucible, said melt of crystalline substance is guided to said eaves-structure, which is then heated, thereby the generation of recrystallization on upper face of the melt contacting with the upper portion of the peripheral wall of the crucible is prevented, and high cooling ef

Abstract: The lateral pulling growth of a thin and wide crystal ribbon is established by laterally pulling the crystal ribbon from the melt of a crystalline substance having the same crystal structure as that of the crystal ribbon with a gaseous cooling medium blown over the surfaces of the melt and the grown crystal.

Abstract: The lateral pulling growth of a thin and wide crystal ribbon is established by laterally pulling the crystal ribbon from the melt of a crystalline substance having the same crystal structure as that of the crystal ribbon with a gaseous cooling medium blown over the surfaces of the melt and the grown crystal.