Abstract: A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first guiding layer formed by a non-doped quaternary compound, an extremely thin intermediate layer highly doped with carriers of the first type. A second active layer is formed by a non-doped quaternary compound, and a protection layer is doped with carriers of a second type where only the active layer is etched in the form of one or more steps and then buried in a layer of sheathing doped with carriers of the second type.

Abstract: A laser device or double buried heterostructure optical guide amplifier and a simple method for the integration of this device into any photonic circuit. The device has a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first layer playing the role of an optical guide formed by a non-doped quaternary compound and covering the entire surface of the buffer layer, an extremely thin intermediate layer, highly doped with carriers of the first type and covering the entire surface of the guiding layer, one or more strips of active layer playing the role of lasers or amplifiers formed by a non-doped quaternary compound, and a sheathing layer doped with carriers of a second type. The device can be used in the field of integrated optics of optical telecommunications.

Abstract: A semiconductor opto-electronic device including at least one electronic function component (62), at least one optical function component (60) and a mode transformer associated with the optical function component. At least some layers of semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength. The mode transformer is preferably etched in the shape of an hourglass.