Abstract: The invention relates to a capacitive micro-machined ultrasound transducer (CMUT) cell (6) comprising a cell floor (31) having a first electrode (7); a cell membrane (5) having a second electrode (7?) which opposes the first electrode and vibrates during transmission or reception of acoustic energy; a transmitter/receiver coupled to the first and second electrodes which causes the cell membrane to vibrate at an acoustic frequency and/or receives signals at an acoustic frequency; and an acoustic lens (13), overlaying the cell membrane, and having an inner surface opposing the cell membrane and an outer, patient-facing surface. According to the present invention the acoustic lens comprises at least one layer of a material selected from the group of: polybudatiene, polyether block amide (PEBAX), polydimethylsiloxane (PDMS) and buthylrubber.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.

Abstract: The invention relates to an elongated interventional device (1), configured to receive an optical shape sensing fiber (9) and comprising (i) an elongated proximal section (22) including at fixation element (24) at its proximal end, the fixation element (24) being connectable to a reception (25) at a predetermined location (3); and (ii) an elongated distal section (21) connected to the proximal section (22). The proximal section (22) has a lower torsion stiffness than the distal section (21) and comprises at least two substantially co-axial tubes, the outer tube having a lower torsion stiffness than an inner tube. Thus, the elongated interventional device (1) can be affixed to the predetermined location in order to determine its shape and position by means of optical shape sensing without affecting the device's maneuverability, particularly with respect to rotational movements of the distal section (21).

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (110) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10).

Abstract: Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (100) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material.

Abstract: The present invention relates to a pre-collapsed capacitive micro-machined transducer cell (10) comprising a substrate (12), and a membrane (14) disposed above a total membrane area (Atotal), wherein a cavity (20) is formed between the membrane (14) and the substrate (12), the membrane comprising a hole (15) and an edge portion (14a) surrounding the hole (15). The cell (10) further comprises a stress layer (17) on the membrane (14), the stress layer (17) having a predetermined stress value with respect to the membrane (14), the stress layer (17) being adapted to provide a bending moment on the membrane (14) in a direction towards the substrate (12) such that the edge portion (14a) of the membrane (14) is collapsed to the substrate (12). The present invention further relates to a method of manufacturing such pre-collapsed capacitive micro-machined transducer cell (10).

Abstract: The invention relates to a data communication system (100) and a method that can particularly be applied for communicating data from a medical instrument like a catheter or a guide-wire via a high-speedlink (101). The system (100) comprises (in-vivo) a slave component (150) with a controllable slave clock (153) and a transmitter (151) for transmitting a data signal (ds) that is clocked by the slave clock signal (clk). Moreover, it comprises (ex-vivo) a master component (110) with a clock controller (114,115,116) that receives a master clock signal (ref_clk) and the data signal (ds) and that generates a clock control signal (ccs) for adjusting the slave clock (153) to the master clock (113). The slave clock (153) may thus be realized with low space and energy requirements, e.g. by a voltage controlled oscillator (VCO). Moreover, the link (101) via which the data signal (ds) and the clock control signal (ccs) are exchanged may be realized by just two signal wires.

Abstract: The invention relates to a capacitive micro-machined ultrasound transducer (CMUT) cell (6) comprising a cell floor (31) having a first electrode (7); a cell membrane (5) having a second electrode (7?) which opposes the first electrode and vibrates during transmission or reception of acoustic energy; a transmitter/receiver coupled to the first and second electrodes which causes the cell membrane to vibrate at an acoustic frequency and/or receives signals at an acoustic frequency; and an acoustic lens (13), overlaying the cell membrane, and having an inner surface opposing the cell membrane and an outer, patient-facing surface. According to the present invention the acoustic lens comprises at least one layer of a material selected from the group of: polybudatiene, polyether block amide (PEBAX), polydimethylsiloxane (PDMS) and buthylrubber.

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: Integrated circuit (100) sensor array, comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140a) on said insulating layer, the first transistor comprising an exposed functionalized channel region (146a) in between a source region (142a) and a drain region (144) for sensing an analyte in a medium; a second transistor (140b) on said insulating layer, the second transistor comprising an exposed channel region (146b) in between a source region (142b) and a drain region (144) for sensing a potential of said medium; and a voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.

Abstract: The present invention relates to a pre-collapsed capacitive micro-machined transducer cell (10) comprising a substrate (12), and a membrane (14) disposed above a total membrane area ((Atotal), wherein a cavity (20) is formed between the membrane (14) and the substrate (12), the membrane (14) comprising a hole (15) and an edge portion (14a) surrounding the hole (15), the edge portion (14a) of the membrane (14) being collapsed to the substrate (12). The cell further comprises a plug (30) arranged in the hole (15) of the membrane (14), the plug (30) being located only in a subarea (Asub) of the total membrane area (Atotal). The present invention further relates to a method of manufacturing such pre-collapsed capacitive micro-machined transducer cell (10).

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract: The invention relates to a data communication system (100) and a method that can particularly be applied for communicating data from a medical instrument like a catheter or a guide-wire via a high-speedlink (101). The system (100) comprises (in-vivo) a slave component (150) with a controllable slave clock (153) and a transmitter (151) for transmitting a data signal (ds) that is clocked by the slave clock signal (clk). Moreover, it comprises (ex-vivo) a master component (110) with a clock controller (114,115,116) that receives a master clock signal (ref_clk) and the data signal (ds) and that generates a clock control signal (ccs) for adjusting the slave clock (153) to the master clock (113). The slave clock (153) may thus be realized with low space and energy requirements, e.g. by a voltage controlled oscillator (VCO). Moreover, the link (101) via which the data signal (ds) and the clock control signal (ccs) are exchanged may be realized by just two signal wires.

Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.