Patents by Inventor Bowan TAO

Bowan TAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film deposition preparation device and method
    Patent number: 11180854
    Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
    Type: Grant
    Filed: February 24, 2019
    Date of Patent: November 23, 2021
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Bowan Tao, Jie Xiong, Fei Zhang, Chaoren Li, Xiaohui Zhao, Yanrong Li
  • THIN FILM DEPOSITION PREPARATION DEVICE AND METHOD
    Publication number: 20190186015
    Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
    Type: Application
    Filed: February 24, 2019
    Publication date: June 20, 2019
    Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Bowan TAO, Jie XIONG, Fei ZHANG, Chaoren LI, Xiaohui ZHAO, Yanrong LI
  • Thin film deposition preparation device and method
    Patent number: 10253413
    Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: April 9, 2019
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Bowan Tao, Jie Xiong, Fei Zhang, Chaoren Li, Xiaohui Zhao, Yanrong Li
  • THIN FILM DEPOSITION PREPARATION DEVICE AND METHOD
    Publication number: 20170191163
    Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
    Type: Application
    Filed: April 30, 2015
    Publication date: July 6, 2017
    Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Bowan TAO, Jie XIONG, Fei ZHANG, Chaoren LI, Xiaohui ZHAO, Yanrong LI