Abstract: A pneumatic impact disassembly tool includes an impact cylinder, a separator disposed in the impact cylinder to divide it into a first and a second chamber, an air conduit, an air inlet switch, and a connection rod. The separator has an air chamber in communication with the first and the second chambers through a first and a second air ducts. The air conduit passes through the impact cylinder to be connected with the separator and communicates with the air chamber. The air inlet switch is coaxially connected with the air conduit and controls the gas entry into the impact cylinder. The connection rod passes through the impact cylinder to be coaxially connected with the air conduit. When the air conduit inputs a gas, the impact cylinder generates a sliding shock back and forth between the air conduit and the connection rod for pneumatic impact disassembly.

Abstract: A semiconductor device includes a first transistor, a second transistor above the first transistor, and an isolation structure. The first transistor includes a first semiconductor channel layer, a first gate structure wrapping around the first semiconductor channel layer, and first source/drain epitaxy structures on opposite ends of the first semiconductor channel layer. The second transistor includes a second semiconductor channel layer, a second gate structure wrapping around the second semiconductor channel layer, and second source/drain epitaxy structures on opposite ends of the second semiconductor channel layer. The isolation structure electrically isolates the first gate structure from the second gate structure, wherein in a top view the isolation structure is adjacent to the second gate structure, and wherein in a first cross-sectional view, the isolation structure wraps around the first semiconductor channel layer.

Abstract: A pneumatic impact disassembly tool includes an impact cylinder, a separator disposed in the impact cylinder to divide it into a first and a second chamber, an air conduit, an air inlet switch, and a connection rod. The separator has an air chamber in communication with the first and the second chambers through a first and a second air ducts. The air conduit passes through the impact cylinder to be connected with the separator and communicates with the air chamber. The air inlet switch is coaxially connected with the air conduit and controls the gas entry into the impact cylinder. The connection rod passes through the impact cylinder to be coaxially connected with the air conduit. When the air conduit inputs a gas, the impact cylinder generates a sliding shock back and forth between the air conduit and the connection rod for pneumatic impact disassembly.

Abstract: A method for manufacturing an integrated circuit device is provided. The method includes depositing an epitaxial stack over a substrate, wherein the epitaxial stack comprises a bottom epitaxial stack, a sacrificial semiconductor layer over the bottom epitaxial stack, a top epitaxial stack over the sacrificial semiconductor layer, the bottom epitaxial stack comprises a bottom semiconductor layer and a bottom doped sacrificial layer, and the top epitaxial stack comprises a top semiconductor layer and a top doped sacrificial layer; replacing first portions of the doped bottom sacrificial layer, the sacrificial semiconductor layer, and the top doped sacrificial layer with a gate structure; and replacing a second portion of the sacrificial semiconductor layer with a dielectric isolation layer.

Abstract: A semiconductor device includes a first transistor, a second transistor above the first transistor, and an isolation structure. The first transistor includes a first semiconductor channel layer, a first gate structure wrapping around the first semiconductor channel layer, and first source/drain epitaxy structures on opposite ends of the first semiconductor channel layer. The second transistor includes a second semiconductor channel layer, a second gate structure wrapping around the second semiconductor channel layer, and second source/drain epitaxy structures on opposite ends of the second semiconductor channel layer. The isolation structure electrically isolates the first gate structure from the second gate structure, wherein in a top view the isolation structure is adjacent to the second gate structure, and wherein in a first cross-sectional view, the isolation structure wraps around the first semiconductor channel layer.

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor is provided. The MIM capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor is provided. The MIM capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Abstract: A metal-insulator-metal (MIM) capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substrate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Abstract: A metal-insulator-metal (MIM) capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substrate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Abstract: An oxygen sensing device with capability of storing energy and releasing energy including an oxygen sensing unit, a gas storing unit, and a control unit. The oxygen sensing unit includes a solid oxide electrolyte disposed between two conductive catalyst layers. The control unit includes a power source, a voltmeter, and a power output circuit. The power source provides electrical power to these conductive catalyst layers of the oxygen sensing unit to process a catalytic reaction and generate hydrocarbons for being stored in the gas storing unit. The voltmeter senses a voltage generated by the oxygen sensing unit when the oxygen sensing unit senses oxygen. The oxygen sensing unit makes the hydrocarbons stored in the gas storing unit and oxygen process a chemical reaction for generating electrical power to the power output circuit. The oxygen sensing unit uses the power source to generate hydrogen or syngas.

Abstract: An oxygen sensing device with capability of storing energy and releasing energy including an oxygen sensing unit, a gas storing unit, and a control unit. The oxygen sensing unit includes a solid oxide electrolyte disposed between two conductive catalyst layers. The control unit includes a power source, a voltmeter, and a power output circuit. The power source provides electrical power to these conductive catalyst layers of the oxygen sensing unit to process a catalytic reaction and generate hydrocarbons for being stored in the gas storing unit. The voltmeter senses a voltage generated by the oxygen sensing unit when the oxygen sensing unit senses oxygen. The oxygen sensing unit makes the hydrocarbons stored in the gas storing unit and oxygen process a chemical reaction for generating electrical power to the power output circuit. The oxygen sensing unit uses the power source to generate hydrogen or syngas.

Abstract: A loading prediction method, applicable to an electronic device, includes the following steps. Multiple resource loading records of the electronic device at multiple time periods are recorded, respectively. A predicted time point is received. A time difference between the predicted time point and a current time point is calculated. The predicted time point is greater than the current time point on a timeline. Whether the time difference is less than a threshold value is determined. A regression-based prediction according to the resource loading records is performed when the time difference is less than the threshold value. A clustering-based prediction according to the resource loading records is performed when the time difference is not less than the threshold value.

Abstract: An oxygen sensing device with capability of storing energy and releasing energy including an oxygen sensing unit, a gas storing unit, and a control unit. The oxygen sensing unit includes a solid oxide electrolyte disposed between two conductive catalyst layers. The control unit includes a power source, a voltmeter, and a power output circuit. The power source provides electrical power to these conductive catalyst layers of the oxygen sensing unit to process a catalytic reaction and generate hydrocarbons for being stored in the gas storing unit. The voltmeter senses a voltage generated by the oxygen sensing unit when the oxygen sensing unit senses oxygen. The oxygen sensing unit makes the hydrocarbons stored in the gas storing unit and oxygen process a chemical reaction for generating electrical power to the power output circuit. The oxygen sensing unit uses the power source to generate hydrogen or syngas.