Patents by Inventor Bowei YANG

Bowei YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220153408
    Abstract: A dragonfly-like miniature four-winged ornithopter includes: a fuselage (101), two front flapping wings (102), two front wing connectors (103) with first connecting rods, two rear flapping wings (104), two rear wing connectors (105) with second connecting rods, a driving gear (106), a shaft gear (107), a first-stage gear (108), two second-stage gears (109) with third connecting rods, two third-stage gears (114) with fourth connecting rods, two front ball joint connecting rods (110), two rear ball joint connecting rods (111), two steering engine connecting rods (112), two steer engines (113), and a brushless direct current motor.
    Type: Application
    Filed: May 20, 2020
    Publication date: May 19, 2022
    Inventors: Yao ZHENG, Guanghua SONG, Changping DU, Bowei YANG, Zhixian YE, Rui YANG, Junyin CHEN, Zekun ZHANG, Sipeng WANG, Jianfu HAN
  • Patent number: 11152936
    Abstract: The present invention discloses a gate drive circuit for reducing a reverse recovery current of a power device, and belongs to the field of basic electronic circuit technologies. The gate drive circuit includes a high-voltage LDMOS transistor, a diode forming a freewheeling path when the diode is turned on or a low-voltage MOS transistor in anti-parallel connection with a body diode, and a voltage detection circuit.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: October 19, 2021
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Jing Zhu, Weifeng Sun, Bowei Yang, Siyuan Yu, Yangyang Lu, Longxing Shi
  • Publication number: 20210218396
    Abstract: The present invention discloses a gate drive circuit for reducing a reverse recovery current of a power device, and belongs to the field of basic electronic circuit technologies. The gate drive circuit includes a high-voltage LDMOS transistor, a diode forming a freewheeling path when the diode is turned on or a low-voltage MOS transistor in anti-parallel connection with a body diode, and a voltage detection circuit.
    Type: Application
    Filed: April 15, 2020
    Publication date: July 15, 2021
    Inventors: Jing ZHU, Weifeng SUN, Bowei YANG, Siyuan YU, Yangyang LU, Longxing SHI, Shengli LU