Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive material. The negative electrode active material includes SiOx (0?x<2) particles and the conductive material includes secondary particles in which a portion of one graphene sheet is connected to a portion of an adjacent graphene sheet and a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are coupled to each other, wherein the oxygen content of the secondary particles is 1 wt % to 10 wt % based on the total weight of the secondary particles, the specific surface area of the secondary particles measured by a nitrogen adsorption BET method is 500 m2/g to 1100 m2/g, and the carbon nanotube structure is included in the negative electrode active material layer in an amount of an 0.01 wt % to 1.0 wt %.

Abstract: A banking processing method according is performed by a processing logic including an application for banking processing implemented on a user terminal and a computer-readable storage medium. The method comprises the steps of: when the application for banking processing is run, searching a hardware security area of the user terminal and confirming the existence of a certificate for confirming an execution history of the application for banking processing; when the existence of the certificate is confirmed, searching the security area and confirming the existence of a token key for identifying whether login information of the user has been set; when the existence of the token key is not confirmed, setting the login information of the user by providing a membership page for setting the login information of the user; and opening an account according to a request of the user whose login information has been set.

Abstract: A semiconductor memory device includes a bit line extending in a first direction on a substrate, an active pattern on the bit line, a word line on a first sidewall of the active pattern and extending in a second direction, a back gate electrode on a second sidewall of the active pattern and extending in the second direction, a gate isolation pattern on the first sidewall of the active pattern and including a low-k pattern extending in the second direction, and a data storage pattern connected to the second surface of the active pattern. The word line is between the active pattern and the gate isolation pattern, and a vertical distance between the bit line and the word line is greater than a vertical distance between the bit line and the low-k pattern.

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.