Abstract: The present disclosure provides a resonator and a preparation method therefor, relating to the technical field of resonators. The resonator comprises a substrate, and a first electrode layer, a first piezoelectric layer, and a second electrode layer which are sequentially stacked onto the substrate. The first electrode layer, the first piezoelectric layer, and the second electrode layer form a first overlapping region along the stacking direction. A capacitor stacking layer is arranged on the first piezoelectric layer and located outside the first overlapping region. A passivation layer is arranged above the second electrode layer, and the passivation layer extends above the capacitor stacking layer.

Abstract: Disclosed are an interdigital resonator and a filter. The interdigital resonator includes a piezoelectric layer and an interdigital transducer located on one side of the piezoelectric layer. The electrode fingers include a double-layer electrode structure and at least one scattering structure provided in the double-layer electrode structure. The double-layer electrode structure includes at least two laminated electrode layers. The scattering structure includes scattering holes and scattering media provided in the scattering holes. The scattering holes penetrate through at least a part of the double-layer electrode structure. The acoustic impedance of the scattering medium is different from the acoustic impedance of an electrode layer where the scattering medium is located.

Abstract: The present disclosure relates to the technical field of resonators. Provided are a bulk acoustic resonator and an electrode design method for the bulk acoustic resonator. The bulk acoustic resonator includes a substrate, and a bottom electrode, a piezoelectric layer and a top electrode laminated on the substrate in sequence. The bottom electrode and/or the top electrode have orthographic projections on the substrate, the profile of the orthographic projections is formed by sequentially connecting a plurality of curve segments end to end, the plurality of curve segments are all intercepted from line segments near non-endpoints of a plurality of Bezier curves, and the order of the Bezier curves is equal to or greater than 2.

Abstract: A bulk acoustic wave resonator and a method for manufacturing therefor are provided. The bulk acoustic wave resonator includes a substrate, a lower conductive layer, a piezoelectric layer, and an upper conductive layer. At least one first cavity located between the upper conductive layer and the piezoelectric layer is provided at a boundary of an overlapping area. A plurality of first support columns are provided in the at least one first cavity. The plurality of first support columns are used for dividing the at least one first cavity into a plurality of through holes at least partially located in the overlapping area. The plurality of through holes are arranged in a direction from a center of the overlapping area to the boundary.

Abstract: The present disclosure provides a bulk acoustic wave resonator and a manufacturing method thereof, and relates to the technical field of resonators. The bulk acoustic wave resonator includes a substrate, and a lower conductive layer, a piezoelectric layer and an upper conductive layer, which are sequentially disposed on the substrate in a stacked manner, wherein the lower conductive layer, the piezoelectric layer and the upper conductive layer have an overlapping region in a stacking direction, a first cavity located between the upper conductive layer and the piezoelectric layer is disposed outside the overlapping region, a plurality of first support columns are disposed inside the first cavity, the plurality of first support columns are supported between the piezoelectric layer and the upper conductive layer, the plurality of first support columns divide the first cavity into a plurality of through holes.

Abstract: A film bulk acoustic resonator and a manufacturing method therefor are provided. The film bulk acoustic resonator includes: a substrate, and a lower electrode, a piezoelectric layer, electrode frame layers and an upper electrode sequentially stacked on the substrate; wherein a cavity is formed between the substrate and the lower electrode, a Q-increasing structure is formed by the lower electrode in a vertical projection range of the cavity, and a first air wing and a first air bridge are formed between the upper electrode and the piezoelectric layer.

Abstract: The present application discloses a bulk acoustic wave resonator and a preparation method thereof. The bulk acoustic wave resonator includes: a substrate, a transducer stacking structure, and a protective layer; the transducer stacking structure is located on one side of the substrate; a cavity is arranged in the substrate; the cavity penetrates through a portion of the substrate; a release channel is arranged in the transducer stacking structure; the release channel penetrates through the transducer stacking structure and is communicated to the cavity; the protective layer is arranged on a surface of one side of the transducer stacking structure away from the substrate; and the protective layer includes a waterproof material.

Abstract: The present application discloses a bulk acoustic wave resonator and a method for manufacturing the same. The bulk acoustic wave resonator includes a substrate and a plurality of resonance assemblies arranged on the substrate, each of the plurality of resonance assemblies includes a bottom electrode, a piezoelectric layer, and a top electrode which are arranged on the substrate in sequence; the plurality of resonance assemblies are connected in sequence to form a connecting ring; the top electrode of one resonance assembly in two adjacent resonance assemblies is connected to the bottom electrode of the other resonance assembly in the two adjacent resonance assemblies, and the top electrodes of two target resonance assemblies spaced apart by one resonance assembly are connected to each other to transmit an input signal; and the bottom electrodes of the two target resonance assemblies are connected to each other to transmit an output signal.

Abstract: The present application discloses a bulk acoustic wave resonance assembly and a method for manufacturing the same. The bulk acoustic wave resonance assembly of the present application includes a substrate, a first resonance assembly and a second resonance assembly which are arranged on the substrate; an interconnection region is formed between the first resonance assembly and the second resonance assembly; the first resonance assembly includes a first bottom electrode, a first piezoelectric layer, and a first top electrode which are arranged on the substrate in sequence; the second resonance assembly includes a second bottom electrode, a second piezoelectric layer, and a second top electrode which are arranged on the substrate in sequence; the first bottom electrode and the second top electrode are connected to each other in the interconnection region; and the second bottom electrode and the first top electrode are connected to each other in the interconnection region.

Abstract: A resonator, a filter and a duplexer, which relate to the technical field of resonators. The resonator includes: a substrate, and a lower electrode layer, a piezoelectric layer and an upper electrode layer, which are sequentially formed on the substrate, wherein an acoustic reflection structure is formed on a surface of the substrate that is close to the lower electrode layer, and an overlapping region of the acoustic reflection structure, the lower electrode layer, the piezoelectric layer and the upper electrode layer along a stacking direction forms a resonant region; and in the resonant region, the surface, which is away from the substrate, of at least one of the lower electrode layer, the piezoelectric layer and the upper electrode layer is etched to form an etched region, the depth of the etched region is less than the thickness of an etched layer, and the area of the etched region is less than the area of the resonant region.

Abstract: This application provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. The bulk acoustic wave resonator includes a substrate, and a bottom electrode, a piezoelectric layer, a top electrode which are sequentially stacked on the substrate, and an outline of an orthographic projection of the top electrode on the substrate is formed by four curves which are end-to-end connected. Arc transition is set at a joint of every two adjacent curves, and every two curves arranged in a spaced manner are not parallel. Accordingly, reliability of devices can be effectively improved, meanwhile, parasitic resonance amplitude can be effectively restrained, a Q value is increased, and thus device properties are improved.

Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.

Abstract: The present application provides a resonator and a method of preparing same, and relates to the field of semiconductor technologies. The method includes: providing a device wafer, wherein the device wafer includes a first substrate and a piezoelectric layer, a bottom electrode, and a first mass loading layer formed in sequence on the first substrate; forming, on the bottom electrode, a sacrificial layer covering the first mass loading layer; forming a supporting layer on one side of the device wafer with the sacrificial layer; forming a second substrate on the supporting layer through a bonding process; removing the first substrate to expose the piezoelectric layer; forming a top electrode and a second mass loading layer in sequence on the piezoelectric layer; and releasing the sacrificial layer to form a cavity between the first mass loading layer and the supporting layer.

Abstract: The present application discloses a piezoelectric micro electrical mechanical system (MEMS) microphone chip and a piezoelectric MEMS microphone, and relates to the technical field of piezoelectric devices. The piezoelectric MEMS microphone chip includes at least one substrate frame and at least one plurality of sound receiving beams arranged on the substrate frame. Each of the sound receiving beams includes a connecting beam and a cantilever beam. The connecting beam and the cantilever beam are staggered on a circumference. One ends of the plurality of sound receiving beams that face a geometric center of the a circumference are fixedly connected to one another in a center defined by the substrate frame, and one end of the connecting beam that is away from the geometric center is fixedly connected to the substrate frame.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: A resonator and a preparation method of a resonator, and a filter relate to the technical field of resonators.

Abstract: The present disclosure provides a single crystal film bulk acoustic resonator, a manufacturing method for a single crystal film bulk acoustic resonator, and a filter, and relates to the technical field of filters. The method includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode that are stacked on a temporary base substrate; forming a first bonding layer on the first electrode; providing a substrate; etching the substrate to form a plurality of first bumps on a surface of the substrate; forming a second bonding layer covering top surfaces of the plurality of first bumps on the surface of the substrate; and bonding the second bonding layer located at the top surfaces of the plurality of first bumps to the first bonding layer.

Abstract: This present disclosure provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. A substrate and a piezoelectric stack structure arranged on the substrate are included. The piezoelectric stack structure includes a bottom electrode, a piezoelectric material layer and a top electrode which are sequentially stacked, and an outline of an orthographic projection of the top electrode on the substrate includes at least one Bezier curve of order greater than or equal to 2.