Abstract: This application provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. The bulk acoustic wave resonator includes a substrate, and a bottom electrode, a piezoelectric layer, a top electrode which are sequentially stacked on the substrate, and an outline of an orthographic projection of the top electrode on the substrate is formed by four curves which are end-to-end connected. Arc transition is set at a joint of every two adjacent curves, and every two curves arranged in a spaced manner are not parallel. Accordingly, reliability of devices can be effectively improved, meanwhile, parasitic resonance amplitude can be effectively restrained, a Q value is increased, and thus device properties are improved.

Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.

Abstract: The present application provides a resonator and a method of preparing same, and relates to the field of semiconductor technologies. The method includes: providing a device wafer, wherein the device wafer includes a first substrate and a piezoelectric layer, a bottom electrode, and a first mass loading layer formed in sequence on the first substrate; forming, on the bottom electrode, a sacrificial layer covering the first mass loading layer; forming a supporting layer on one side of the device wafer with the sacrificial layer; forming a second substrate on the supporting layer through a bonding process; removing the first substrate to expose the piezoelectric layer; forming a top electrode and a second mass loading layer in sequence on the piezoelectric layer; and releasing the sacrificial layer to form a cavity between the first mass loading layer and the supporting layer.

Abstract: The present application discloses a piezoelectric micro electrical mechanical system (MEMS) microphone chip and a piezoelectric MEMS microphone, and relates to the technical field of piezoelectric devices. The piezoelectric MEMS microphone chip includes at least one substrate frame and at least one plurality of sound receiving beams arranged on the substrate frame. Each of the sound receiving beams includes a connecting beam and a cantilever beam. The connecting beam and the cantilever beam are staggered on a circumference. One ends of the plurality of sound receiving beams that face a geometric center of the a circumference are fixedly connected to one another in a center defined by the substrate frame, and one end of the connecting beam that is away from the geometric center is fixedly connected to the substrate frame.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: A resonator and a preparation method of a resonator, and a filter relate to the technical field of resonators.

Abstract: The present disclosure provides a single crystal film bulk acoustic resonator, a manufacturing method for a single crystal film bulk acoustic resonator, and a filter, and relates to the technical field of filters. The method includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode that are stacked on a temporary base substrate; forming a first bonding layer on the first electrode; providing a substrate; etching the substrate to form a plurality of first bumps on a surface of the substrate; forming a second bonding layer covering top surfaces of the plurality of first bumps on the surface of the substrate; and bonding the second bonding layer located at the top surfaces of the plurality of first bumps to the first bonding layer.

Abstract: This present disclosure provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. A substrate and a piezoelectric stack structure arranged on the substrate are included. The piezoelectric stack structure includes a bottom electrode, a piezoelectric material layer and a top electrode which are sequentially stacked, and an outline of an orthographic projection of the top electrode on the substrate includes at least one Bezier curve of order greater than or equal to 2.

Abstract: The disclosure provides a film bulk acoustic resonator and a manufacturing method therefor, and a film bulk acoustic wave filter, and relates to the technical field of resonators. The film bulk acoustic resonator includes a substrate, where the substrate is provided with two opposite protective walls protruding out of a surface of the substrate, a cavity is formed between the two protective walls, and an insulating layer is further arranged on one side, away from the cavity, of each protective wall on the substrate; and the film bulk acoustic resonator further includes a transducer stacking structure, where the transducer stacking structure covers the insulating layer, the cavity and the protective walls, and two sides, along a stacking direction, of the transducer stacking structure are in communication with the cavity and the outside respectively.

Abstract: A resonator, a filter and a duplexer, which relate to the technical field of resonators. The resonator includes: a substrate, and a lower electrode layer, a piezoelectric layer and an upper electrode layer, which are sequentially formed on the substrate, wherein an acoustic reflection structure is formed on a surface of the substrate that is close to the lower electrode layer, and an overlapping region of the acoustic reflection structure, the lower electrode layer, the piezoelectric layer and the upper electrode layer along a stacking direction forms a resonant region; and in the resonant region, the surface, which is away from the substrate, of at least one of the lower electrode layer, the piezoelectric layer and the upper electrode layer is etched to form an etched region, the depth of the etched region is less than the thickness of an etched layer, and the area of the etched region is less than the area of the resonant region.