Abstract: A method for operating a memory is provided, including, for example, obtaining a set of read voltages, each of which can include an initial voltage value and an offset voltage value with a certain offset relative to the initial voltage value. The initial voltage value in each of the set of read voltages can be a preset read voltage for distinguishing two adjacent memory states of memory cells of the memory. The operating method can further include performing read operations respectively based on the initial voltage values and the offset voltage values, obtaining the quantity of memory cells in which a read result corresponding to each voltage value meets set conditions, determining a difference between the two quantities corresponding to every two adjacent voltage values belonging to the same set of read voltages, and determining an optimal read voltage for distinguishing the two adjacent memory states based on the difference.

Abstract: A method for handling a read error on a block of a memory device is disclosed. In response to a read failure indicating that at least one error handling mechanism has handled the read error on the block and fails to read data stored in the block, a memory test is trigged to be performed on the block. The memory test is configured to determine whether the block malfunctions.

Abstract: The present disclosure provides a method of data protection for a three-dimensional NAND memory. The method includes programming a memory cell of the 3D NAND memory according to programming data; and backing up a portion of the programming data associated with the memory cell in response to a program loop count (PLC) that is larger than a threshold value, where the PLC tracks a repeated number of the programming of the memory cell. A previous PLC can be set as the threshold value, where the previous PLC was used by a previous programming operation and was collected after the memory cell was programmed successfully to a previous target logic state.

Abstract: In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.

Abstract: In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.