Patents by Inventor Boya Cui

Boya Cui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation for improved contact hole critical dimension uniformity
    Patent number: 9735013
    Abstract: Provided herein are approaches for patterning a semiconductor device. In an exemplary approach, a method includes providing a set of contact openings through a photoresist formed atop a substrate, and implanting ions into just a sidewall surface of the set of contact openings. In an exemplary approach, the ions are implanted at an implant angle nonparallel with the sidewall surface to prevent the ions from implanting a surface of the substrate within the set of contact openings, and to form a treated layer along an entire height of the contact opening. The method further includes etching the substrate within the set of contact openings after the ions are implanted into the sidewall surface. As a result, by using an angled ion implantation to the contact opening sidewall surface as a pretreatment prior to etching, local critical dimension uniformity is improved.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: August 15, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Tristan Y. Ma, John Hautala, Maureen K. Petterson, Boya Cui
  • ION IMPLANTATION FOR IMPROVED CONTACT HOLE CRITICAL DIMENSION UNIFORMITY
    Publication number: 20170178911
    Abstract: Provided herein are approaches for patterning a semiconductor device. In an exemplary approach, a method includes providing a set of contact openings through a photoresist formed atop a substrate, and implanting ions into just a sidewall surface of the set of contact openings. In an exemplary approach, the ions are implanted at an implant angle nonparallel with the sidewall surface to prevent the ions from implanting a surface of the substrate within the set of contact openings, and to form a treated layer along an entire height of the contact opening. The method further includes etching the substrate within the set of contact openings after the ions are implanted into the sidewall surface. As a result, by using an angled ion implantation to the contact opening sidewall surface as a pretreatment prior to etching, local critical dimension uniformity is improved.
    Type: Application
    Filed: December 16, 2015
    Publication date: June 22, 2017
    Inventors: Tristan Y. MA, John Hautala, Maureen K. Petterson, Boya Cui