Patents by Inventor Boyan I. Boyanov

Boyan I. Boyanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7235809
    Abstract: A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: June 26, 2007
    Assignee: Intel Corporation
    Inventors: Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz, Boyan I. Boyanov, Suman Datta, Jack T. Kavalieros, Robert S. Chau
  • Patent number: 7138316
    Abstract: A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.
    Type: Grant
    Filed: September 23, 2003
    Date of Patent: November 21, 2006
    Assignee: Intel Corporation
    Inventors: Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz, Boyan I. Boyanov, Suman Datta, Jack T. Kavalieros, Robert S. Chau