Abstract: A method for predicting adsorption capacity of volatile organic compounds across adsorption temperatures is provided, pertaining to the field of waste gas treatment technology. The method comprises: selecting at least two porous materials, measuring their pore structure parameters and adsorption isotherms for VOCs, and obtaining a ternary matching equation among the critical pore size that can undergo volume-filling adsorption, relative pressure, and adsorption temperature. In the present disclosure, pore size, relative pressure, and adsorption temperature are introduced as variables, along with coefficients for volume-filling and surface-covering adsorption, and the equation coefficients are determined using test data from model adsorption materials, thereby constructing an across-temperature VOCs adsorption capacity prediction equation. This equation can be applied to predict VOCs adsorption capacity and isotherms at different adsorption temperatures for adsorbents with similar surface properties.

Abstract: A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

Abstract: A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

Abstract: A method for performing plasma enhanced chemical vapor deposition (PECVD) using a dual frequency process to deposit a silane-based oxide film on a substrate includes arranging the substrate on a substrate support in a processing chamber configured to perform PECVD and supplying PECVD process gases into the processing chamber. The process gases include a first process gas including silicon and a second process gas including an oxidant. The method further includes, while supplying the PECVD process gases into the processing chamber, generating a dual frequency plasma within the processing chamber to deposit the silane-based oxide film on the substrate by supplying a first radio frequency (RF) voltage to the processing chamber, and supplying a second RF voltage to the processing chamber. The first RF voltage is supplied at a first frequency and the second RF voltage is supplied at a second frequency that is different than the first frequency.

Abstract: This disclosure provides boron nitride nanosheets, and methods of making and using the same. The boron nitride nanosheets may be made by heating solid boron, magnesium oxide and iron oxide compounds in a furnace in the presence of ammonia gas and a substrate, such that the boron nitride nanosheet is deposited on the substrate, where the boron nitride nanosheet comprises a first end, a second end, and a sheet between the first and second ends, where the first end is engaged with the substrate and the sheet extends upward away from the substrate and then curls back towards the substrate so that the second end is oriented towards the substrate.