Patents by Inventor Brad Herner

Brad Herner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
    Patent number: 8913417
    Abstract: A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: December 16, 2014
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Brad Herner, Michael W. Konevecki
  • Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
    Patent number: 8816315
    Abstract: A memory cell is provided that includes a reversible resistance-switching element above a substrate. The reversible resistance-switching element includes an etched material layer that includes an oxidized layer of the etched material layer above a non-oxidized layer of the etched material layer. Numerous other aspects are provided.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: August 26, 2014
    Assignee: SanDisk 3D LLC
    Inventors: April D. Schricker, Brad Herner, Mark H. Clark
  • Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
    Patent number: 8558220
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: October 15, 2013
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Mark Clark, Brad Herner
  • Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
    Patent number: 8373150
    Abstract: In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: February 12, 2013
    Assignee: SanDisk 3D, LLC
    Inventors: April D. Schricker, Brad Herner, Mark H. Clark
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20120286233
    Abstract: A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided.
    Type: Application
    Filed: July 24, 2012
    Publication date: November 15, 2012
    Inventors: April Schricker, Brad Herner, Michael W. Konevecki
  • DENSE ARRAYS AND CHARGE STORAGE DEVICES
    Publication number: 20120223380
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: May 10, 2012
    Publication date: September 6, 2012
    Applicant: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Andrew J. Walker, Christopher J. Petti, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald, Brad Herner
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20120217462
    Abstract: A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The reversible resistance-switching element includes one or more of TiOx, Ta2O5, Nb2O5, Al2O3, HfO2, and V2O5, and the reversible resistance switching element is formed without being etched. Numerous other aspects are provided.
    Type: Application
    Filed: May 4, 2012
    Publication date: August 30, 2012
    Inventors: April Schricker, Brad Herner, Mark Clark
  • Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
    Patent number: 8236623
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: August 7, 2012
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Mark Clark, Brad Herner
  • Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
    Patent number: 8233308
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: July 31, 2012
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Brad Herner, Michael W. Konevecki
  • DENSE ARRAYS AND CHARGE STORAGE DEVICES
    Publication number: 20110156044
    Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
    Type: Application
    Filed: February 14, 2011
    Publication date: June 30, 2011
    Applicant: SanDisk 3D LLC
    Inventors: Thomas H. Lee, Vivek Subramanian, James M. Cleeves, Andrew J. Walker, Christopher J. Petti, Igor G. Kouznetzov, Mark G. Johnson, Paul Michael Farmwald, Brad Herner
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20110147693
    Abstract: In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
    Type: Application
    Filed: March 1, 2011
    Publication date: June 23, 2011
    Inventors: APRIL SCHRICKER, BRAD HERNER, MARK CLARK
  • Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
    Patent number: 7902537
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: March 8, 2011
    Assignee: Sandisk 3D LLC
    Inventors: April Schricker, Brad Herner, Mark Clark
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20110042639
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element coupled to the steering element by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
    Type: Application
    Filed: October 29, 2010
    Publication date: February 24, 2011
    Inventors: April Schricker, Brad Herner, Mark Clark
  • Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
    Patent number: 7846785
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: December 7, 2010
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Brad Herner, Michael W. Konevecki
  • Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
    Patent number: 7824956
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: November 2, 2010
    Assignee: SanDisk 3D LLC
    Inventors: April Schricker, Brad Herner, Mark Clark
  • MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FORMING THE SAME
    Publication number: 20090166610
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) fabricating a carbon nano-tube (CNT) material above the first conductor; (3) depositing a dielectric material onto a top surface of the CNT material; (4) planarizing the dielectric material to expose at least a portion of the CNT material; (5) fabricating a diode above the first conductor; and (6) fabricating a second conductor above the CNT material and the diode. Numerous other aspects are provided.
    Type: Application
    Filed: December 31, 2007
    Publication date: July 2, 2009
    Inventors: April Schricker, Mark Clark, Brad Herner, Yoichiro Tanaka
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME
    Publication number: 20090166609
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
    Type: Application
    Filed: December 31, 2007
    Publication date: July 2, 2009
    Inventors: April Schricker, Mark Clark, Brad Herner
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20090168491
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.
    Type: Application
    Filed: December 31, 2007
    Publication date: July 2, 2009
    Inventors: April Schricker, Mark Clark, Brad Herner
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20090001345
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Inventors: April Schricker, Brad Herner, Michael W. Konevecki
  • MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME
    Publication number: 20090001342
    Abstract: In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Inventors: APRIL SCHRICKER, Brad Herner, Mark Clark