Abstract: Various biopsy devices configured to biopsy tissue from a body cavity and methods of use are provided. In an exemplary embodiment, a biopsy sleeve is provided with an elongate shaft having distal and proximal ends. The elongate shaft is configured to receive at least a portion of an imaging device therein, and an engagement member is disposed on the proximal end and configured to engage with the imaging device. A biopsy collector is engageable with the elongate shaft and is configured to collect tissue for a biopsy sample. At least part of the distal end of the elongate shaft is configured to allow visualization therethrough using the imaging device such that a user can visualize the tissue being collected.

Abstract: Various biopsy devices configured to biopsy tissue from a body cavity and methods of use are provided. In an exemplary embodiment, a biopsy sleeve is provided with an elongate shaft having distal and proximal ends. The elongate shaft is configured to receive at least a portion of an imaging device therein, and an engagement member is disposed on the proximal end and configured to engage with the imaging device. A biopsy collector is engageable with the elongate shaft and is configured to collect tissue for a biopsy sample. At least part of the distal end of the elongate shaft is configured to allow visualization therethrough using the imaging device such that a user can visualize the tissue being collected.

Abstract: A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate.

Abstract: A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate.