Abstract: A circuit includes a switched capacitor circuit and a voltage generator circuit. The switched capacitor circuit includes first, second, third, and fourth switches and first and second capacitors. The first capacitor has first and second terminals, the first terminal coupled to the first switch. The second capacitor has first and second terminals, the second terminal coupled to the second switch. The third switch has a terminal coupled to the second terminals of the first and second capacitors. The fourth switch has first and second terminals, the first terminal coupled the terminal of the third switch and to the second terminals of the first and second capacitors. The voltage generator circuit has an output coupled to the second terminal of the fourth switch and is configured to provide a common mode output bias voltage at the second terminal of the fourth switch responsive to a common mode input bias voltage.

Abstract: Embodiments of the present disclosure are directed to methods and systems for the timely processing of records exchanged between service provider systems and responsible entity systems by a records management and processing system. More specifically, the records management and processing system can maintain a set of rules defining conditions for processing records and associated actions to affect that processing upon satisfaction of or failure to satisfy the conditions of that rule. Updates to some or all of these records can be received from a data update service. The records management and processing system can apply the rules to the records and assign tags to the records based on the received update information and the conditions defined in the applied rules. The records management and processing system can then process the updated records according to workflows for processing the updated records based on the assigned tags and applied rules.

Abstract: Embodiments of the present disclosure are directed to methods and systems for the timely processing of records exchanged between service provider systems and responsible entity systems by a records management and processing system. More specifically, the records management and processing system can maintain a set of rules defining conditions for processing records and associated actions to affect that processing upon satisfaction of or failure to satisfy the conditions of that rule. Updates to some or all of these records can be received from a data update service. The records management and processing system can apply the rules to the records and assign tags to the records based on the received update information and the conditions defined in the applied rules. The records management and processing system can then process the updated records according to workflows for processing the updated records based on the assigned tags and applied rules.

Abstract: An apparatus and method for a regulated voltage boost charge pump for an integrated circuit (IC) device. The charge pump generally includes a plurality of switching networks and a lift capacitor that are intermittently coupled to an output capacitor or to a regulating transistor, a differential error amplifier biasing a gate terminal of the transistor, and a controller configured to alternate states of switches in the switching networks in a pre-selected timing relationship with a clock signal of the IC device.

Abstract: A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.

Abstract: An apparatus and method for a regulated voltage boost charge pump for an integrated circuit (IC) device. The charge pump generally includes a plurality of switching networks and a lift capacitor that are intermittently coupled to an output capacitor or to a regulating transistor, a differential error amplifier biasing a gate terminal of the transistor, and a controller configured to alternate states of switches in the switching networks in a pre-selected timing relationship with a clock signal of the IC device.

Abstract: A digital to analog converter (DAC) system includes a resistor network providing enhanced response time and steady state characteristics.

Abstract: A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.

Abstract: In a memory (100), a local data line pair (116, 118) is precharged to a first logic state and a global data line pair (101, 104) is precharged to a second logic state. A selected memory cell is coupled to the local data line pair (116, 118) to develop a differential local data line voltage. The differential local data line voltage is subsequently amplified to form an amplified differential local data line voltage. A selected one of the global data line pair (101, 104) is driven to the first logic state in response to the amplified differential local data line voltage to form a differential global data line voltage.

Abstract: An electronic device includes a memory cell that utilizes a bi-directional low impedance, low voltage drop full pass gate to connect a bit cell to a bit write line during a write phase, and during a read phase the full pass gate can remain off and a high input impedance read port can acquire and transmit the logic state stored by the memory cell to another subsystem. The full pass gate can be implemented by connecting a P type metal semiconductor field effect transistor (PMOS) in parallel with an NMOS device and driving the gates of the transistors with a differential signal. When a write operation requires a current to flow in a first direction, the PMOS device provides a negligible voltage drop, and when the write operation requires current to flow in a second or the opposite direction, the NMOS device can provide a negligible voltage.

Abstract: In accordance with the present disclosure, an electronic circuit of an integrated circuit is configured to receive an input signal that has a falling transition and a rising transition and provide a selectable delay of the input signal transitions on its output. The output of the disclosed circuit can provide a falling transition delayed in response to a falling edge control signal control, and a rising transition delayed in response to a rising edge control signal. The disclosed circuit can have a rising transition control circuit (RTCC), a falling transition control circuit (FTCC) and an output circuit.