Abstract: A semiconductor package and a method for fabricating a semiconductor package are disclosed. In one embodiment, the semiconductor package includes an exposed portion of a conductive strap at a package horizontal first surface and exposed surfaces of multiple leads at a package horizontal second surface. A power semiconductor die is mounted on a die pad connected to at least one lead having an exposed surface. Heat generated by the die within the package may be dissipated through thermal paths including the exposed surfaces.

Abstract: A two-lead, surface-mounting, high-power micro-leadframe semiconductor package has the same outline, mounting, and electrical functionality as industry standard leadframe packages but provides a lower internal resistance, a higher package power rating, and costs less to produce. The novel package incorporates one of a rectangular array of “micro-leadframes” (“MLFs”), each having parallel and respectively coplanar upper and lower surfaces etched in a plate having a uniform thickness. Each micro-leadframe includes an I-shaped die pad having a head, a foot, and opposite sides. First and second leads are disposed at the foot of the die pad, each having a side aligned with one of the sides of the pad. The second lead has an right-angled wire-bonding pad next to the die pad. A portion of a lower surface of each of the die pad and the leads is exposed through a lower surface of an envelope of plastic molded on the package to define package input/output terminals.

Abstract: A semiconductor device is disclosed that includes a semiconductor die, a metal leadframe, and a metal strap. A bottom surface of the semiconductor device is on and electrically coupled to a first portion of the leadframe. A first end portion of the metal strap is on and electrically coupled to a top surface of the semiconductor die. An opposite, second end portion of the metal strap is on and electrically coupled to a second portion of the leadframe within a recess of the second portion of the leadframe.

Abstract: A semiconductor package and a method for fabricating a semiconductor package are disclosed. In one embodiment, the semiconductor package includes an exposed portion of a conductive strap at a package horizontal first surface and exposed surfaces of multiple leads at a package horizontal second surface. A power semiconductor die is mounted on a die pad connected to at least one lead having an exposed surface. Heat generated by the die within the package may be dissipated through thermal paths including the exposed surfaces.

Abstract: The invention provides a method and apparatus for electrically connecting the die of a high power semiconductor device to a substrate with a conductive strap such that the connection is resistant to the shear stresses resulting with changes in temperature. In one embodiment, the method includes providing a substrate having first and second portions that are electrically isolated from each other. A semiconductor die having top and bottom surfaces and one or more active electronic devices formed therein is also provided. The device has a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die. The first conductive layer is electrically coupled to a top surface of the first portion of the substrate. The second conductive layer is electrically coupled to the second portion of the substrate with a metal strap.

Abstract: The invention provides a method and apparatus for electrically connecting the die of a high power semiconductor device to a substrate with a conductive strap such that the connection is resistant to the shear stresses resulting with changes in temperature. In one embodiment, the method includes providing a substrate having first and second portions that are electrically isolated from each other. A semiconductor die having top and bottom surfaces and one or more active electronic devices formed therein is also provided. The device has a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die. The first conductive layer is electrically coupled to a top surface of the first portion of the substrate. The second conductive layer is electrically coupled to the second portion of the substrate with a metal strap.

Abstract: A thin, thermally efficient, lead frame-type of semiconductor package incorporating multiple dies includes a plurality of electrically conductive leads held together in a spaced, planar relationship about a central opening defined by the leads, and a plurality of thick, plate-like heat sinks supported within the opening such they are generally coplanar with each other, parallel to the plane of the leads, and electrically isolated from the leads and each other. Each of the heat sinks has a lower surface that can be exposed through the outer surface of a molded resin envelope encapsulating the package for the efficient dissipation of heat therefrom, and an upper surface having a recess formed into it. A semiconductor die is mounted in each of the recesses with its back surface in electrical connection with the floor of the recess.