Abstract: Light emitting devices include an LED that includes an n-type semiconductor layer and a p-type semiconductor layer that is stacked on top of the n-type semiconductor layer. A p-contact metallization stack is on top of the p-type semiconductor layer. An opening extends through the p-type semiconductor layer and the p-contact metallization stack that has a first region that penetrates the p-type semiconductor layer to expose the n-type semiconductor layer and a second region that penetrates the p-contact metallization stack. A bond metal stack is on top of the p-contact metallization stack, and a metal spacer layer is provided between the bond metal stack and the stacked semiconductor layers. The metal spacer layer fills the first region and at least partly fills the second region of the opening so that a lower surface of the bond metal stack is above a top surface of the p-type semiconductor layer.

Abstract: The present invention relates to a novel domed polycrystalline diamond cutting element wherein a hemispherical diamond layer is bonded to a tungsten carbide substrate, commonly referred to as a tungsten carbide stud. Broadly, the inventive cutting element includes a metal carbide stud having a proximal end adapted to be placed into a drill bit and a distal end portion. A layer of cutting polycrystalline abrasive material disposed over said distal end portion such that an annulus of metal carbide adjacent and above said drill bit is not covered by said abrasive material layer. The geometry of the diamond cutting element provides control of interfacial stresses and reduces fabrication costs. The diamond cutting element may contain a pattern of ridges or bumps integrally formed in the abrasive layer which ridges are designed to cause high localized stresses in the rock, thus starting a crack. By initiating cracks in localized areas, the crushing action could be performed with less force.

Abstract: This invention relates to a novel domed polycrystalline diamond cutting element wherein a hemispherical diamond layer is bonded to a tungsten carbide substrate, commonly referred to as a tungsten carbide stud. Broadly, a pattern of ridges or bumps is integrally formed in the abrasive layer which ridges are designed to cause high localized stresses in the rock, thus starting a crack. By initiating cracks in localized areas, the crushing action could be performed with less force.

Abstract: An abrasive cutting element comprised of an abrasive cutting layer and a metal substrate wherein the interface therebetween has a tangential chamfer, the plane of which forms an angle of about 5.degree. to about 85.degree. with the plane of the surface of the cylindrical part of the metal substrate. The abrasive cutting layer is preferably diamond or cubic boron nitride and the metal substrate is preferably tungsten carbide.