Abstract: Methods and apparatus for identifying anomalies in data may operate in conjunction with a processing system and an output. The system may receive actual data and generate nominal data according to the actual data. The system may compare the actual data to the nominal data and identify an outlier in the actual data compared to the nominal data. The output may provide information relating to the identified outlier. In various embodiments, the system may include a neural network.

Abstract: An approximate distance between an ultrasonic transducer and a fetal heart is determined. A range of distances from the ultrasonic transducer is sensed using the ultrasonic transducer, wherein the range has a minimum distance based upon the approximate distance. A heart rate of the fetal heart is monitored using ultrasonic echo signals from the range.

Abstract: A fetal heart signal contribution is determined from an ultra sound signal by suppressing any maternal contribution from the ultrasound signal. The fetal heart signal contribution is canceled or subtracted from the ultrasound signal. An alarm is outputted based upon a result of the cancellation.

Abstract: The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.

Abstract: An electron beam device includes a diamond layer positioned downstream from and in the path of an electron beam. This diamond layer has a conductance that is responsive to the electron beam. Two electrical contacts on the diamond layer provide connections to a power source and a load. When the electron beam is on, the diamond layer becomes conductive allowing electrical power to flow from the power source through the diamond layer to the load. Accordingly, the electron beam device can act as a switch, or the electron beam can be modulated to provide an amplifier. The diamond layer is capable of high temperature operation, resists crystal damage, resists corrosion, and provides a high breakdown voltage. At least one of the electrical contacts on the diamond layer preferably comprises a degeneratively doped diamond surface portion.

Abstract: A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides.

Abstract: A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer.

Abstract: A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree..