Abstract: Support systems and stands for electronic devices include tilt hinges, lift arms, and their component parts. Some tilt hinges include assemblies for guiding and retaining bars or protrusions into preferred positioning within receiver openings to unify the parts, particularly as they move, and to reduce wobble or slop in the joints. Lift arms provide simplified and low-cost guidance and counterbalance mechanisms for controlling movement of the electronic device relative to the base of a stand. In some cases, the lift arms have sheaths to help protect or cover mechanisms while allowing additional space for the mechanisms within the lift arm. Other interconnection systems hide and protect a connector interface between the stand and the electronic device within a housing until unlocked and the connector is moved into an exposed position. These systems improve efficiency, comfort, ergonomics, accessibility, and user satisfaction of the electronic devices and their supports.

Abstract: Support systems and stands for electronic devices include tilt hinges, lift arms, and their component parts. Some tilt hinges include assemblies for guiding and retaining bars or protrusions into preferred positioning within receiver openings to unify the parts, particularly as they move, and to reduce wobble or slop in the joints. Lift arms provide simplified and low-cost guidance and counterbalance mechanisms for controlling movement of the electronic device relative to the base of a stand. In some cases, the lift arms have sheaths to help protect or cover mechanisms while allowing additional space for the mechanisms within the lift arm. Other interconnection systems hide and protect a connector interface between the stand and the electronic device within a housing until unlocked and the connector is moved into an exposed position. These systems improve efficiency, comfort, ergonomics, accessibility, and user satisfaction of the electronic devices and their supports.

Abstract: A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.

Abstract: A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.