Patents by Inventor Bradley J. Robinson

Bradley J. Robinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11106249
    Abstract: A hinge assembly includes a first and a second set of friction elements engaged each other by an applied force perpendicular to the friction elements. The first and the second set of friction elements are capable of rotational movement about a cylindrical element that passes through each of the friction elements. Also, the first set of friction elements is capable of movement relative to the second set of friction elements. However, the first set friction elements can remain in a fixed position based upon the applied force, until an external force overcomes the applied. During rotation of the first set of friction elements about the cylindrical element, the frictional engagement that controls the position of the first set of friction elements is based primarily on engagement between the friction elements, as opposed to engagement, if any, between the friction elements and the cylindrical element.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: August 31, 2021
    Assignee: Apple Inc.
    Inventors: Aidan N. Zimmerman, Kevin M. Robinson, Scott J. Krahn, Chien-Tsun Chen, Bradley J. Hamel, Arthur Stanley Brigham
  • Patent number: 6797533
    Abstract: A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: September 28, 2004
    Assignee: McMaster University
    Inventors: David A. Thompson, Bradley J. Robinson, Gregory J. Letal, Alex S. W. Lee, Brooke Gordon
  • Publication number: 20030071265
    Abstract: A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases.
    Type: Application
    Filed: October 4, 2002
    Publication date: April 17, 2003
    Applicant: FOX TEK
    Inventors: David A. Thompson, Bradley J. Robinson, Gregory J. Letal, Alex S.W. Lee, Brooke Gordon