Abstract: A system for controlling bond front propagation in wafer-scale packaging includes a first substrate, a second substrate, and a bonder pressure plate having protruded structures thereon to selectively establish at least one point of contact between the first and second substrates to initiate a bond front therebetween. The protruded structures are selectively configured to control the propagation of the bond front.

Abstract: In one embodiment, a package for a micro-device includes a substrate, a transparent material covering the substrate, and a bond ring bonding the transparent material to the substrate. The bond ring comprises a silicon oxide layer on one of the substrate or the transparent material bonded to a silicon layer on the other of the substrate or the transparent material.

Abstract: A multi-device lid for a micro device wafer has a plurality of micro devices. The multi-device lid includes a multi-lid substrate configured to cover the plurality of micro devices of the micro device wafer. The multi-lid substrate has a trench pattern with intersection portions and non-intersection portions on a first side of the multi-lid substrate. The trench pattern is configured such that the intersection portions of the trench pattern extend adjacent to at least two of the plurality of micro devices when the multi-lid substrate is coupled to the micro device wafer.

Abstract: A method of making a semiconductor device including the steps of fabricating at least one component on a substrate and coating the component with a first self-aligned polymer film.

Abstract: A method for packaging and singulating a wafer having a plurality of micro devices includes providing a multi-lid substrate having a trench having intersection portions and non-intersection portions formed on a first side of the multi-lid substrate. The multi-lid substrate is coupled to the wafer such that the intersection portions of the trench pattern extend adjacent to at least three micro devices. Portions of the multi-lid substrate between a second side of the multi-lid substrate and the trench pattern are removed while the multi-lid substrate is coupled to the wafer.