Abstract: The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.

Abstract: The present invention provides a polishing composition and a method for removing polysilicon in preference to silicon dioxide, silicate glasses and/or silicon nitride via chemical-mechanical polishing during semiconductor device fabrication. In a preferred embodiment, the polishing composition includes an aqueous dispersion of ceria abrasive particles, from about 0.005% to about 0.15% by weight of a polyethyleneimine and a sufficient amount of an acid to adjust the pH of the polishing composition within the range of from about 4.7 to about 5.1. The polishing composition can be used to remove polysilicon via CMP at removal rates that are acceptable in semiconductor device fabrication applications while simultaneously suppressing the rate at which silicon dioxide, silicate glasses and silicon nitride are removed.

Abstract: The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.