Abstract: A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Abstract: A system and method of heating a workpiece to a desired temperature is disclosed. This system and method consider the physical limitations of the temperature device, such as time lag, temperature offset, and calibration, in creating a hybrid approach that heats the workpiece more efficiently. First, the workpiece is heated using open loop control to heat the workpiece to a threshold temperature. After the threshold temperature is reach, a closed loop maintenance mode is utilized. In certain embodiments, an open loop maintenance mode is employed between the open loop warmup mode and the closed loop maintenance mode. Additionally, a method of calibrating a pyrometer using a contact thermocouple is also disclosed.

Abstract: A system and method of heating a workpiece to a desired temperature is disclosed. This system and method consider the physical limitations of the temperature device, such as time lag, temperature offset, and calibration, in creating a hybrid approach that heats the workpiece more efficiently. First, the workpiece is heated using open loop control to heat the workpiece to a threshold temperature. After the threshold temperature is reach, a closed loop maintenance mode is utilized. In certain embodiments, an open loop maintenance mode is employed between the open loop warmup mode and the closed loop maintenance mode. Additionally, a method of calibrating a pyrometer using a contact thermocouple is also disclosed.

Abstract: A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Abstract: A system and method for reducing particulate contamination during the loading and unloading of semiconductor substrates into a load lock chamber of a semiconductor processing tool. One sensor that measures the differential pressure between the inside of the load lock and the outside atmosphere is provided. The method uses an algorithm that predicts when to stop the load lock vent so that a small, positive, repeatable pressure burst is delivered each time the door opens. This algorithm will automatically adjust for changes in the vent rate and response times of system vent components.

Abstract: A system and method for reducing particulate contamination during the loading and unloading of semiconductor substrates into a load lock chamber of a semiconductor processing tool. One sensor that measures the differential pressure between the inside of the load lock and the outside atmosphere is provided. The method uses an algorithm that predicts when to stop the load lock vent so that a small, positive, repeatable pressure burst is delivered each time the door opens. This algorithm will automatically adjust for changes in the vent rate and response times of system vent components.