Abstract: Apparatuses, systems, and methods for a damper for a printed circuit board assembly (PCBA). One example apparatus can include a PCBA of a solid state drive (SSD) and a damper configured to contact the PCBA, contact an enclosure of the SSD, and damp shock impulses applied to the SSD.

Abstract: A printed wiring board assembly is disclosed that includes a printed wiring board with a first side and a second side opposite first side. Magnet structures are in physical contact with the printed wiring board and a microelectronic device component is coupled to the first side of the printed wiring board. A heat spreader overlies and is in thermal communication with the microelectronic device component, and posts are coupled to the heat spreader and horizontally neighbor the microelectronic device component, where the posts are in magnetic communication with the magnet structures. Related methods and electronic systems are also disclosed.

Abstract: A printed wiring board is disclosed, with a build-up lamination material comprising a die side and a land side; a recess in the build-up lamination material at the die side, the recess comprising a recess floor; a first wall orthogonal to the recess floor; a second wall orthogonal to the recess floor, the second wall spaced apart from and opposite the first wall; a first recessed contact pad including a first vertical portion substantially in the recess at the first wall; a second recessed contact pad including a second vertical portion substantially in the recess at the second wall; and electrical coupling structures within the build-up lamination material, the electrical coupling structures coupled to each of the first recessed contact pad and the second recessed contact pad.

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.

Abstract: A method for separating semiconductor die stacks of a chip-on-wafer assembly is disclosed herein. In one example, divider walls are arranged in a pattern on a first surface of a device wafer such that regions between the divider walls define mounting sites. Die stacks are mounted to the device wafer, wherein individual die stacks are located at a corresponding mounting site between the divider walls. The device wafer is cut through from a second surface that is opposite the first surface of the device wafer, and the divider walls are removed from between the die stacks to form a vacant lane between adjacent die stacks.

Abstract: Apparatuses, systems, and methods for coupling a capacitor to a printed circuit board assembly. One example apparatus can include a number of capacitors and a connector coupled to the number of capacitors, the connector configured to removably couple the number of capacitors to a printed circuit board assembly of a solid state drive.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

Abstract: A method for separating semiconductor die stacks of a chip-on-wafer assembly is disclosed herein. In one example, divider walls are arranged in a pattern on a first surface of a device wafer such that regions between the divider walls define mounting sites. Die stacks are mounted to the device wafer, wherein individual die stacks are located at a corresponding mounting site between the divider walls. The device wafer is cut through from a second surface that is opposite the first surface of the device wafer, and the divider walls are removed from between the die stacks to form a vacant lane between adjacent die stacks.

Abstract: A method for separating semiconductor die stacks of a chip-on-wafer assembly is disclosed herein. In one example, divider walls are arranged in a pattern on a first surface of a device wafer such that regions between the divider walls define mounting sites. Die stacks are mounted to the device wafer, wherein individual die stacks are located at a corresponding mounting site between the divider walls. The device wafer is cut through from a second surface that is opposite the first surface of the device wafer, and the divider walls are removed from between the die stacks to form a vacant lane between adjacent die stacks.

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.

Abstract: Methods for fabricating microelectronic device assemblies, the method comprising providing mutually spaced stacks of microelectronic devices on a substrate and substantially concurrently encapsulating the stacks of microelectronic devices on the substrate and gang bonding mutually aligned conductive elements of vertically adjacent microelectronic devices. Compression molding apparatus for implementing the methods, and resulting microelectronic device assemblies are also disclosed.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

Abstract: Methods for fabricating microelectronic device assemblies, the method comprising providing mutually spaced stacks of microelectronic devices on a substrate and substantially concurrently encapsulating the stacks of microelectronic devices on the substrate and gang bonding mutually aligned conductive elements of vertically adjacent microelectronic devices. Compression molding apparatus for implementing the methods, and resulting microelectronic device assemblies are also disclosed.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.

Abstract: A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies and a package substrate carrying the first and second semiconductor dies. The second semiconductor die includes a first peripheral portion extending laterally outward beyond a first edge surface of the first semiconductor die. Similarly, the package substrate includes a second peripheral portion extending laterally outward beyond a second edge surface of the second semiconductor die. The semiconductor die assembly further includes a first volume of molded underfill material between the first and second semiconductor dies, a second volume of molded underfill material between the package substrate and the second semiconductor die, a first molded peripheral structure laterally adjacent to the first edge surface of the first semiconductor die, and a second molded peripheral structure laterally adjacent to the second edge surface of the second semiconductor die.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.