Abstract: The present invention relates to a method of preparing a solid solution ceramic material having increased electromechanical strain, as well as ceramic materials obtainable therefrom and uses thereof.

Abstract: The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.

Abstract: The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein x+y+Z1+Z2=1; y, (z1+z2)?0; x?0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y+z?i+z2=1; x, y, fa+z2)?0; as well as a ceramic material of general formula (III): y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein y+z1,+z2=1; y, (z1+z2)?0.

Abstract: The present disclosure is drawn to a piezoelectric thin film stack and method of preparing the same. The piezoelectric thin film stack can comprise a substrate with an oxide application surface, a metal oxide adhesive blend layer applied to the oxide application surface, and a piezoelectric film applied directly to the metal oxide adhesive blend layer.

Abstract: The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.

Abstract: The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein x+y+Z1+Z2=1; y, (z1+z2)?0; x?0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y +z-i+z2=1; x, y, fa+z2)?0; as well as a ceramic material of general formula (III): y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein y+z1,+z2=1; y, (z1+z2)?0.

Abstract: The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material.

Abstract: The present disclosure is drawn to electrocaloric devices, methods of making electrocaloric integrated circuits, and methods of thermally cycling integrated circuits. The electrocaloric device can include an electrocaloric material having a solid solution of two or more components of BNT, BKT, BZT, BMgT, or BNiT. The electrocaloric material can have an ergodic transition temperature within a range of 50 C to 300 C. The device can also include electrodes associated with the electrocaloric material, as well as an electrical source to add or reduce electrical field between the electrodes across the electrocaloric material to generate heating or cooling relative to the ergodic transition temperature of the electrocaloric material.

Abstract: The present disclosure is drawn to an oxygen conducting bismuth perovskite material, a method of conducting oxygen through the material, and a method of making the material. The oxygen conducting bismuth perovskite material can include two components selected from the group consisting of NBT, KBT, BZT, BMT, and BNiT. The material can also have a sufficient degree of non-stoichiometry to provide oxygen vacancies to conduct oxide ions.

Abstract: The present disclosure is drawn to a piezoelectric thin film stack and method of preparing the same. The piezoelectric thin film stack can comprise a substrate with an oxide application surface, a metal oxide adhesive blend layer applied to the oxide application surface, and a piezoelectric film applied directly to the metal oxide adhesive blend layer.

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBi(A0.5Ti0.5)O3-y(Bi0.5K0.5)TiO3-z(Bi0.5Na0.5)TiO3, wherein x+y+z=1, x?0, and A=Ni or Mg.

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBi(Zn0.5Ti0.5)O3-y(Bi0.5K0.5)TiO3-z(Bi0.5Na0.5)TiO3, wherein x+y+z=1 and x, y, z?0.

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBi(A0.5Ti0.5)O3-y(Bi0.5K0.5)TiO3-z(Bi0.5Na0.5)TiO3, wherein x+y+z=1, x?0, and A=Ni or Mg.