Patents by Inventor Brahim Elattari

Brahim Elattari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench structures in direct contact
    Patent number: 8378445
    Abstract: A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer to the substrate and includes sidewall insulation and conductive material in electrical contact with the substrate at a bottom of the first trench structure. A second trench structure extends through the epitaxial layer to the buried layer and includes sidewall insulation and conductive material in electrical contact with the buried layer at a bottom of the second trench structure. A region of insulating material laterally extends from the conductive material of the first trench structure to the conductive material of the second trench structure and longitudinally extends to a substantial depth of the second trench structure.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: February 19, 2013
    Assignee: Infineon Technologies AG
    Inventors: Brahim Elattari, Franz Hirler
  • Trench Structures in Direct Contact
    Publication number: 20120049274
    Abstract: A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer to the substrate and includes sidewall insulation and conductive material in electrical contact with the substrate at a bottom of the first trench structure. A second trench structure extends through the epitaxial layer to the buried layer and includes sidewall insulation and conductive material in electrical contact with the buried layer at a bottom of the second trench structure. A region of insulating material laterally extends from the conductive material of the first trench structure to the conductive material of the second trench structure and longitudinally extends to a substantial depth of the second trench structure.
    Type: Application
    Filed: August 31, 2010
    Publication date: March 1, 2012
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Brahim Elattari, Franz Hirler