Patents by Inventor Brain D. Pratt

Brain D. Pratt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for high voltage superjunction termination
    Patent number: 7622787
    Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.
    Type: Grant
    Filed: April 16, 2008
    Date of Patent: November 24, 2009
    Assignee: Third Dimension (3D) Semiconductor, Inc.
    Inventors: Fwu-Iuan Hshieh, Brain D. Pratt