Abstract: Total internal reflection image displays are equipped with a bistability enhancement particle interaction layer. The bistability enhancement layer imparts bistability in the display at 0V or power off. The bistability enhancement layer may hold particles near the surface in the evanescent wave region at the front electrode at 0V or power off to retain a dark state image. The particle interaction layer may hold particles near the surface of the rear electrode at 0V or power off to retain a bright state image. Control of particle density improves bistability.

Abstract: A method of forming a selective emitter in a photovoltaic (PV) crystalline silicon semiconductor wafer involves forming a mask on a front side surface of the wafer to create masked and unmasked areas on the front side surface. A first silicon oxide layer is electrochemically formed at the unmasked areas of the front side surface such that the silicon oxide layer extends into an emitter of the wafer at least as far as a dead zone therein. The mask is removed and the first silicon oxide layer is etched back until substantially all of the first silicon oxide layer is removed. A second silicon oxide layer is then electrochemically formed on the front side surface such that the second silicon oxide layer has sufficient thickness to passivate the front side surface.

Abstract: A method of forming a selective emitter in a photovoltaic (PV) crystalline silicon semiconductor wafer involves forming a mask on a front side surface of the wafer to create masked and unmasked areas on the front side surface. A first silicon oxide layer is electrochemically formed at the unmasked areas of the front side surface such that the silicon oxide layer extends into an emitter of the wafer at least as far as a dead zone therein. The mask is removed and the first silicon oxide layer is etched back until substantially all of the first silicon oxide layer is removed. A second silicon oxide layer is then electrochemically formed on the front side surface such that the second silicon oxide layer has sufficient thickness to passivate the front side surface.

Abstract: In accordance with one aspect of the invention, there is provided a shading protected solar cell apparatus for use in a solar cell system. The apparatus includes a solar cell having a front side current collector and a back side current collector. The apparatus also includes a bypass diode closely adjacent the back side current collector, the bypass diode having a front side current collector and a back side current collector. The apparatus further includes a first electrical coupling for electrically coupling the front side current collector of the bypass diode to the back side current collector of the solar cell. The apparatus also includes a second electrical coupling for electrically coupling the back side current collector of the bypass diode to the front side current collector of the solar cell, the first and second electrical couplings cooperating to enable a current generated by non-shaded solar cells in the system to be shunted through the bypass diode when the solar cell is shaded.