Abstract: Methods and systems for context-based mobile device feature control are provided. One method comprises determining, with a mobile device, one or more contexts corresponding to the mobile device; selecting, from a predetermined set of security protocols, a security protocol corresponding to the determined one or more contexts; and adjusting a permission setting for one or more functional features of the mobile device based upon the selected security protocol. One apparatus comprises one or more features configure to input data, output data, transform data, or a combination thereof; and a controller configured to: determine one or more contexts corresponding to the mobile computing device, to select, from a predetermined set of security protocols, a security protocol corresponding to the determined one or more contexts, and to adjust a permission setting for the one or more functional features based upon the selected security protocol.

Abstract: Methods and systems for context-based mobile device feature control are provided. One method comprises determining, with a mobile device, one or more contexts corresponding to the mobile device; selecting, from a predetermined set of security protocols, a security protocol corresponding to the determined one or more contexts; and adjusting a permission setting for one or more functional features of the mobile device based upon the selected security protocol. One apparatus comprises one or more features configure to input data, output data, transform data, or a combination thereof; and a controller configured to: determine one or more contexts corresponding to the mobile computing device, to select, from a predetermined set of security protocols, a security protocol corresponding to the determined one or more contexts, and to adjust a permission setting for the one or more functional features based upon the selected security protocol.

Abstract: Some embodiments include apparatus, systems, and methods having a voltage generator to generate a voltage, a memory cell including a storage node associated with a storage node voltage, and a power controller to provide a signal to the voltage generator such that the voltage generated by the voltage generator rises from a voltage less than a reference voltage to a voltage less than the storage node voltage, and such that the voltage generated by the voltage generator is less than or equal to the storage node voltage, at least partially in response to the apparatus entering into a mode. Other embodiments are described.

Abstract: Some embodiments include apparatus, systems, and methods having a voltage generator to generate a voltage, a memory cell including a storage node associated with a storage node voltage, and a power controller to provide a signal to the voltage generator such that the voltage generated by the voltage generator rises from a voltage less than a reference voltage to a voltage less than the storage node voltage, and such that the voltage generated by the voltage generator is less than or equal to the storage node voltage, at least partially in response to the apparatus entering into a mode. Other embodiments are described.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Abstract: Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.