Abstract: A floor height gauge for setting concrete floors is provided. The floor height gauge for setting concrete floors comprises a body, flange, knob and a possible string notch, as well as it can be used in conjunction with a protrusion or stake, insuring accuracy and eliminating the necessity for skilled workers when setting slab top elevations of concrete slabs. The floor height gauge provides a rotational means for one concrete worker to rotate a screed to level concrete to a slab top elevation.

Abstract: In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” rom the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs.

Abstract: A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.

Abstract: A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics coupled to the laser and configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.

Abstract: In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” from the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs.

Abstract: A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics coupled to the laser and configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.

Abstract: In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” rom the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs.