Abstract: Provided is a cladded single crystal sapphire optical device (e.g., a s sapphire optical fiber or wafer). In one embodiment, the innovation provides a method for forming a cladding in a single crystal sapphire optical device by reactor irradiation. The reactor irradiation creates ions external to the optical device that enter the optical device, displace atoms in the optical device, and are implanted in the optical device, thus modifying the index of refraction of the optical device near the surface of the optical device and creating a cladding in the sapphire optical device.

Abstract: Provided is a cladded single crystal sapphire optical fiber. In one embodiment, the innovation provides a method for forming a cladding in a single crystal sapphire optical fiber by reactor irradiation. The reactor irradiation creates ions external to the fiber that enter the fiber, displace atoms in the fiber, and are implanted in the fiber, thus modifying the index of refraction of the fiber near the surface of the fiber and creating a cladding in the sapphire fiber.

Abstract: Provided is a cladded single crystal sapphire optical fiber. In one embodiment, the innovation provides a method for forming a cladding in a single crystal sapphire optical fiber by reactor irradiation. The reactor irradiation creates ions external to the fiber that enter the fiber, displace atoms in the fiber, and are implanted in the fiber, thus modifying the index of refraction of the fiber near the surface of the fiber and creating a cladding in the sapphire fiber.