Abstract: A method for making a semiconductor device can include providing an intermediate structure comprising a substrate, a metal layer, a graphene layer, and a mask layer, where the metal layer is over the substrate, where the graphene layer is over the metal layer, where the mask layer is over the graphene layer, and where the mask layer and the graphene layer are patterned and etched with recesses opening to a top surface of the metal layer such that sidewalls of the graphene layer are exposed in the recesses, conformally depositing a barrier layer over the intermediate structure such that the barrier layer covers the sidewalls of the graphene layer in the recesses, and anisotropically etching the metal layer via the recesses.

Abstract: A method for fabricating semiconductor devices is disclosed. The method includes sequentially forming at least a first hardmask layer and a second hardmask layer over a metallic layer. The method includes patterning the second hardmask layer and then the first hardmask layer. The method includes oxidizing a sidewall of the patterned first hardmask layer. The method includes removing the oxidized sidewall of the first hardmask layer. The method includes etching the metallic layer using a remaining portion of the first hardmask layer as a mask.

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

Abstract: A point of use irrigation water fertigation system utilizes plasma production of nitrogen-bearing species. Soluble nitrogen-bearing species are generated using an atmospheric air plasma treatment of an irrigation water supply. A plasma is generated by a tube having an air intake. A high frequency generator generates atmospheric plasma. The end of the tube is placed above the surface of the irrigation water supply and the plasma emanating from the tube generates nitrogen species in the water. The non-thermal plasma discharge efficiently produces highly reactive radicals and NOx species that have impact on water chemistry including inactivation of microorganisms with high efficacy and accelerated removal of persistent organic pollutants such as perfluorinated compounds (PFCs) from water samples. Plasma ignition can be initiated with a low flow of helium gas injection. Upon ignition, the gas is transitioned to a helium/room air mix, immediately followed by a transition to ambient room air only.

Abstract: A point of use irrigation water fertigation system utilizes plasma production of nitrogen-bearing species. Soluble nitrogen-bearing species are generated using an atmospheric air plasma treatment of an irrigation water supply. A plasma is generated by a tube having an air intake. A high frequency generator generates atmospheric plasma. The end of the tube is placed above the surface of the irrigation water supply and the plasma emanating from the tube generates nitrogen species in the water. The non-thermal plasma discharge efficiently produces highly reactive radicals and NOx species that have impact on water chemistry including inactivation of microorganisms with high efficacy and accelerated removal of persistent organic pollutants such as perfluorinated compounds (PFCs) from water samples. Plasma ignition can be initiated with a low flow of helium gas injection. Upon ignition, the gas is transitioned to a helium/room air mix, immediately followed by a transition to ambient room air only.